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NanoFab Tool: Raith EBPG 5200+ Electron Beam Lithography
The Raith EBPG 5200+ direct write electron beam lithography system allows users to quickly and directly pattern a variety of substrate materials with features down to 10 nm at the largest field size. The Raith EBPG 5200+ offers a large 1 mm field size as well as the ability to write on curved substrates. The high precision stage along with a dedicated external pre-alignment microscope system provides excellent overlay capabilities along with pattern stitching across write fields. The system's autoloader enables unattended batch processing and can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
Specifications/Capabilities
- Accelerating voltage: 100 keV.
- 125 MHz pattern generator.
- Spot size: < 2 nm.
- Resolution: < 10 nm
- Stitching and overlay accuracy: < 20 nm.
- Maximum Write field: 1 mm.
- Precision laser stage control: λ/4096 (0.15 nm)
- Z-lift stage for thick/curved substrates.
- Unattended batch exposures using autoloader.
- Automatic calibration to correct for scan-linearity, deflection induced focusing and astigmatism.
- Substrate size: Small pieces up to and including 200 mm wafers
- Intuitive graphical user interface
Usage Information
Supported Sample Sizes
- Maximum wafer diameter: 200 mm (8 in).
- Small pieces supported: Yes.
Typical Applications
- Nano-optics and nanophotonic devices.
- High density magnetic nanopillars.
- Novel nanoelectronic and quantum devices.
- Dot arrays and lines with feature sizes < 20 nm.