Detailed Study of Uncertainties in On-Wafer Transistor Noise-Parameter Measurements

Published

October 24, 2016

Author(s)

James P. Randa

Abstract

This paper uses a Monte Carlo simulation program to explore various aspects of uncertainties associated with the measurement of the noise parameters of transistors on wafers. The dependence of the noise-parameter uncertainties on the different input uncertainties is investigated in detail. Other issues that are considered include the effect of probe losses, the importance (or not) of including input terminations with reflection coefficients as near as possible to the edge of the Smith chart, improvements due to inclusion of an input termination with noise temperature well below ambient, and the effect of including a “reverse” measurement. We also briefly consider the case of well-matched amplifiers on wafers.

Citation

Technical Note (NIST TN) - 1939

Report Number

1939

NIST Pub Series

Technical Note (NIST TN)

Pub Type

NIST Pubs

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DOI Link

Keywords

noise parameters, on-wafer measurement, simulation, transistor, uncertainty analysis

Citation

Randa, J. (2016), Detailed Study of Uncertainties in On-Wafer Transistor Noise-Parameter Measurements, Technical Note (NIST TN), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.TN.1939 (Accessed October 17, 2025)