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NanoFab Tool: Atomic Layer Deposition

Oxford FlexAL atomic layer deposition

The Oxford FlexAL atomic layer deposition (ALD) system supports plasma and thermal ALD coating processes with precise ultrathin and pinhole free films. The system deposits films with thicknesses ranging from one atomic layer to several nanometers on a variety of substrate materials and can accommodate substrates ranging from 200 mm diameter wafers down to small pieces. Standard processes include silicon dioxide, hafnium oxide, aluminum oxide, and platinum.


  • Precisely controlled ultrathin and pinhole free film coating.
  • Film thicknesses ranging from one atomic layer to nanometers.
  • Maximum temperature: 300 °C.
  • Maximum ICP power: 300 W.
  • Maximum RF power: 300 W.
  • Standard deposition processes:
    • Silicon dioxide.
    • Hafnium oxide.
    • Aluminum oxide.
    • Platinum.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Nanolaminates coatings.
  • Nanostructure conformal coatings.
  • High-aspect ratio feature coatings.
Created June 4, 2014, Updated April 28, 2023