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Dual Beam Focused Ion Beam / Scanning Electron Microscope (FIB/SEM)

Dual beam focused ion beam/scanning electron microscope (FESEM)
  • Dual beam focused ion beam/scanning electron microscope (FESEM).
  • Focused ion beam using Ga atoms allows the patterning of objects at ~10 nm level (milling and deposition)
  • Sample preparation for Atom Probe & TEM, nanofabrication, analytic capability (EDS)
  • Five gas precursors for enhanced etching and deposition
  • Resolution: Ion column – 3 nm,  FESEM – 1 nm at 15 kV
  • 4"-compatible load lock permits quick sample exchange.
  • Manufacturer/Model: Zeiss Auriga

Research Highlights:

Gallium nitride nanowire being mounted onto an atomic force microscopy tip with a micromanipulator in a NIST focused ion beam tool. 
Credit: Paul Blanchard
Gallium nitride nanowire being mounted onto an atomic force microscopy tip with a micromanipulator in a NIST focused ion beam tool. 

  1.   Nanofabrication of specialty scanning probe tips using the FIB/SEM.  Specialty tips like these have been shown to produce more reproducible materials characterization for new devices being considered for high performance computing and quantum sensors.  More details of the fabrication steps are available at: dual-beam_fib_poster.pdf

 

 

 

  1.  FIB cross-section of a Josephson junction used in quantum voltage standards.  Images like this one are used to identify defects from the fabrication process and suggest corrections.

  1.  Fabrication sequence for a TEM lamella of a row of GaN nanowires grown by selective epitaxy on silicon.  Specimens like these allowed identification of polarity inversion domains at the regrowth interface , which in turn lead to Energy Dispersive Spectroscopy (TEM-based) and atom probe tomography that identified Al and O contamination as the cause.  Modification of the cleaning procedures just before regrowth eliminated the inversion domain defects.  Epitaxial regrowth of GaN  has applications in nanowire LED production and AC-DC and DC-DC power converters. 

Created June 8, 2016, Updated November 15, 2019