Norman A. Sanford

Publications

Laser-assisted atom probe tomography of Ti/TiN films deposited on Si

December 21, 2016

Author(s):

Norman A. Sanford, Paul T. Blanchard, Ryan M. White, Michael R. Vissers, Albert Davydov, D R. Diercks, David P. Pappas

Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm)...

Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy

September 30, 2016

Author(s):

Lawrence H. Robins, Elizabeth Horneber, Norman A. Sanford, Kristine A. Bertness, John B. Schlager

The carrier concentration in ensembles of n-type GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy was determined by curve-fitting analysis...

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

March 02, 2016

Author(s):

Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine A. Bertness

The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were...

Near-field control and imaging of free charge carrier variations in GaN nanowires

February 15, 2016

Author(s):

Samuel Berweger, Paul T. Blanchard, Matthew D. Brubaker, Kevin J. Coakley, Norman A. Sanford, Thomas M. Wallis, Kristine A. Bertness, Pavel Kabos

Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated...

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

December 18, 2015

Author(s):

Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness

We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers...