Wavelength-Dependent Field Ion Emission in Atom Probe Tomography

Published

July 27, 2026

Author(s)

Ann Debay, Benjamin Caplins, Karen DeRocher, Jacob Garcia, May Martin, Mark McLean, Christopher Mead, Luis Miaja Avila, William Osborn, Xiaochen Ren, Norman Sanford

Abstract

Laser-pulsed atom probe tomography (APT) is a powerful tool for materials characterization due to its desirable combination of high spatial resolution and analytical sensitivity. In current state-of-the-art commercial APT instruments, near ultraviolet (NUV; E ≈ 3.5 eV; λ≈ 355 nm) or deep ultraviolet (DUV; (E ≈ 4.8 eV; λ≈ 257 nm) laser pulses are used to provide the energy necessary to overcome the activation barrier for field ion evaporation. APT has been used successfully to characterize a wide range of materials including metals, semiconductors, insulators, biological materials, and even liquids. However, APT data quality and specimen survivability can be degraded due to non-uniform absorption, ionization, or heating of constituent elements or phases in complex heterostructured materials and devices.

Volume

32

Issue

7

Conference Dates

August 2-6, 2026

Conference Location

Milwaukee, WI, US

Conference Title

Microscopy and Microanalysis

Pub Type

Conferences

Download Paper

https://doi.org/10.1093/mam/ozag053.061

Local Download

Keywords

Atom probe tomography, extreme ultraviolet, gate-all-around

Citation

Debay, A. , Caplins, B. , DeRocher, K. , Garcia, J. , Martin, M. , McLean, M. , Mead, C. , Miaja Avila, L. , Osborn, W. , Ren, X. and Sanford, N. (2026), Wavelength-Dependent Field Ion Emission in Atom Probe Tomography, Microscopy and Microanalysis , Milwaukee, WI, US, [online], https://doi.org/10.1093/mam/ozag053.061, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=961599 (Accessed August 20, 2026)

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