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GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Published

Author(s)

Joel C. Weber, Paul T. Blanchard, Aric W. Sanders, Jonas Gertsch, Steven George, Samuel Berweger, Atif A. Imtiaz, Thomas M. Wallis, Kristine A. Bertness, Pavel Kabos, Norman A. Sanford, victor bright

Abstract

We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. The probe has a capacitive resolution of ~0.03 fF, surpassing that of a commercial Pt tip. Imaging of MoS2 sheets found the probe to be immune to surface contamination, owing to its flexible, high- aspect ratio morphology. By improving microwave and topographical sensitivity in a mechanically robust architecture, this probe serves as an ideal platform for additional, complimentary scanning probe techniques.
Citation
Nano Letters
Volume
25
Issue
41

Keywords

Scanning microwave microscopy, gallium nitride, nanowires, atomic layer deposition, molybdenum disulphide

Citation

Weber, J. , Blanchard, P. , Sanders, A. , Gertsch, J. , George, S. , Berweger, S. , Imtiaz, A. , Wallis, T. , Bertness, K. , Kabos, P. , Sanford, N. and Bright, V. (2014), GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy, Nano Letters, [online], https://doi.org/10.1088/0957-4484/25/41/415502 (Accessed June 24, 2021)
Created September 26, 2014, Updated November 10, 2018