NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy
Published
Author(s)
Joel Weber, Paul T. Blanchard, Aric Sanders, Jonas Gertsch, Steven George, Samuel Berweger, Atif A. Imtiaz, Thomas Mitchell (Mitch) Wallis, Kris A. Bertness, Pavel Kabos, Norman A. Sanford, victor bright
Abstract
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. The probe has a capacitive resolution of 0.03 fF, surpassing that of a commercial Pt tip. Imaging of MoS2 sheets found the probe to be immune to surface contamination, owing to its flexible, high- aspect ratio morphology. By improving microwave and topographical sensitivity in a mechanically robust architecture, this probe serves as an ideal platform for additional, complimentary scanning probe techniques.
Weber, J.
, Blanchard, P.
, Sanders, A.
, Gertsch, J.
, George, S.
, Berweger, S.
, Imtiaz, A.
, Wallis, T.
, Bertness, K.
, Kabos, P.
, Sanford, N.
and Bright, V.
(2014),
GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/25/41/415502
(Accessed October 8, 2025)