GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy
Joel C. Weber, Paul T. Blanchard, Aric W. Sanders, Jonas Gertsch, Steven George, Samuel Berweger, Atif A. Imtiaz, Thomas M. Wallis, Kristine A. Bertness, Pavel Kabos, Norman A. Sanford, victor bright
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. The probe has a capacitive resolution of ~0.03 fF, surpassing that of a commercial Pt tip. Imaging of MoS2 sheets found the probe to be immune to surface contamination, owing to its flexible, high- aspect ratio morphology. By improving microwave and topographical sensitivity in a mechanically robust architecture, this probe serves as an ideal platform for additional, complimentary scanning probe techniques.