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Using an electron beam to image the tiniest of defects and patterns on microchips, the scanning electron microscope (SEM) has long been a mainstay of the
Cutting intricate patterns as small as several billionths of a meter deep and wide, the focused ion beam (FIB) is an essential tool for deconstructing and
Researchers at the National Institute of Standards and Technology (NIST) have revived and improved a once-reliable technique to identify and count defects in
Until recently, the semiconductor industry had a go-to method for quantifying atomic-scale defects in the billions of transistors contained in a single computer
Our goal is to develop, advance, and demonstrate measurements that facilitate Nanoimprint Lithography (NIL) as a viable technology for the patterning of robust
Our goal is to provide industry with test structures and models of next-generation photovoltaics, with an initial focus on cadmium telluride (CdTe) and CuIn xGa
Our goal is to develop measurement methods with sufficiently high spatial resolution to uncover the materials limitations in the resolution of state-of-the-art