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A Traceable Scatterometry Measurement of a Silicon Line Grating

Published

Author(s)

Thomas A. Germer, Heather J. Patrick, Ronald G. Dixson

Abstract

In this paper, we present a spectroscopic Mueller matrix ellipsometry measurement of a silicon line grating with nominal pitch of 600 nm and line width 100 nm. An uncertainty analysis is performed on the measurement results. The results are compared to critical dimension atomic force microscopy (CD-AFM) measurements. Except for one of the gratings, the CD-AFM and scatterometry measurements lie within each other’s uncertainties
Proceedings Title
Frontiers of Characterization and Metrology for Nanoelectronics 2011
Volume
1395
Conference Dates
May 23-26, 2011
Conference Location
Grenoble

Keywords

ellipsometry, scatterometry, silicon, traceability

Citation

Germer, T. , Patrick, H. and Dixson, R. (2011), A Traceable Scatterometry Measurement of a Silicon Line Grating, Frontiers of Characterization and Metrology for Nanoelectronics 2011, Grenoble, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908506 (Accessed October 26, 2021)
Created May 26, 2011, Updated February 19, 2017