A Traceable Scatterometry Measurement of a Silicon Line Grating
Thomas A. Germer, Heather J. Patrick, Ronald G. Dixson
In this paper, we present a spectroscopic Mueller matrix ellipsometry measurement of a silicon line grating with nominal pitch of 600 nm and line width 100 nm. An uncertainty analysis is performed on the measurement results. The results are compared to critical dimension atomic force microscopy (CD-AFM) measurements. Except for one of the gratings, the CD-AFM and scatterometry measurements lie within each others uncertainties
Frontiers of Characterization and Metrology for Nanoelectronics 2011
, Patrick, H.
and Dixson, R.
A Traceable Scatterometry Measurement of a Silicon Line Grating, Frontiers of Characterization and Metrology for Nanoelectronics 2011, Grenoble, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908506
(Accessed October 26, 2021)