This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be about 200 GPa, and some nanowire specimens demonstrated more than 4% elongation or greater than 6 GPa maximum engineering stress before failure. Failure modes included clamp failure, nanowire c-plane fractures, and insufficient force from the MEMS test actuator.
Citation: Sensors and Actuators A-Physical
Pub Type: Journals
Tensile loading, gallium nitride, nanowire, single crystal, mechanical testing, MEMS