Gajewski, D.
, Guyer, J.
and Pellegrino, J.
(1999),
Spectroscopic Ellipsometry: In Situ Monitor and Control of III-V Semiconductors Grown by Molecular Beam Epitaxy, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD
(Accessed April 28, 2024)
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Spectroscopic Ellipsometry: In Situ Monitor and Control of III-V Semiconductors Grown by Molecular Beam Epitaxy
Published
Author(s)
Donald A. Gajewski, , Joseph G. Pellegrino
Abstract
My NRC postdoctoral project is to use spectroscopic ellipsometry (SE) to monitor and control the physical properties of thin film III-V semiconductors, in situ and in real time during film growth. I will present SE measurements of the dielectric properties of thin InxGa1-xAs epilayers on GaAs. These measurements have application in monitoring and controlling the composition and thickness of InxGa1-xAs pseudomorphic high electron mobility transistor (pHEMT) channel layers. InxGa1-xAs pHEMT devices are widely employed as low noise amplifiers in wireles technologies. My SE work also includes a study of the kinetics of oxide desorption and oxide formation on GaAs.Citation
NIST Interagency/Internal Report (NISTIR) -
NIST Pub Series
Pub Type
NIST Pubs
Keywords
low noise amplfiers, molecular beam epitaxy, semiconductors, spectroscopic ellipsometry, thin film III-V semiconductors
Citation
Created February 18, 1999, Updated October 12, 2021