Spectroscopic Ellipsometry: In Situ Monitor and Control of III-V Semiconductors Grown by Molecular Beam Epitaxy

Published

February 19, 1999

Author(s)

Donald A. Gajewski, Jonathan E. Guyer, Joseph G. Pellegrino

Abstract

My NRC postdoctoral project is to use spectroscopic ellipsometry (SE) to monitor and control the physical properties of thin film III-V semiconductors, in situ and in real time during film growth. I will present SE measurements of the dielectric properties of thin InxGa1-xAs epilayers on GaAs. These measurements have application in monitoring and controlling the composition and thickness of InxGa1-xAs pseudomorphic high electron mobility transistor (pHEMT) channel layers. InxGa1-xAs pHEMT devices are widely employed as low noise amplifiers in wireles technologies. My SE work also includes a study of the kinetics of oxide desorption and oxide formation on GaAs.

Citation

NIST Interagency/Internal Report (NISTIR) -

NIST Pub Series

NIST Interagency/Internal Report (NISTIR)

Pub Type

NIST Pubs

Keywords

low noise amplfiers, molecular beam epitaxy, semiconductors, spectroscopic ellipsometry, thin film III-V semiconductors

Citation

Gajewski, D. , Guyer, J. and Pellegrino, J. (1999), Spectroscopic Ellipsometry: In Situ Monitor and Control of III-V Semiconductors Grown by Molecular Beam Epitaxy, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD (Accessed October 7, 2025)