Characterization of standing wave induced roughness is demonstrated using small angle x-ray scattering (SAXS). This roughness originates from the interference of the incident and reflected light beams during photoresist imaging, and is an important barrier to the application of photoresists in the fabrication of sub-100 nm features. The technique is shown to provide the roughness wavelength and amplitude, as well as providing a measure of the photoresist refractive index.
Citation: Applied Physics Letters
Pub Type: Journals
critical dimension metrology, microelectronics, nanofabrication, nanotechnology, polymer coatings, sidewall roughness, small angle x-ray scattering, thin films