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Search Publications by: Stephen Moxim (Fed)

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Displaying 1 - 10 of 10

Observation and Analysis of Nine Orders of Magnitude Memory Window in pn GaN Regrowth Vertical Diodes

September 1, 2026
Author(s)
Stephen Moxim, Gelu Comanescu, Cooper Voigt, Ory Maimon, Behrang Hamadani, Andrew Winchester, Emily Bittle, Qiliang Li, Travis Anderson, Jennifer Hite, Albert Davydov, Jason Campbell, Sujitra Pookpanratana, Jason Ryan
Wide bandgap semiconductors, including gallium nitride (GaN), are crucial for next-generation power electronics due to their superior properties compared to silicon. However, challenges in their fabrication, particularly with epitaxial regrowth for

Defects involved in TDDB-stressed SiC MOSFET

April 28, 2026
Author(s)
Cooper Voigt, Stephen Moxim, Jason Campbell, Akin Akturk, Jason Ryan
We report electrically-detected magnetic resonance, electron spin resonance, charge pumping and transfer characteristics of SiC lateral MOSFETs before and after accelerated TDDB stress at 9 MV/cm field. The different responses measured via each technique

Electron Spin Resonance Sensor for Portable and Adaptable Retrospective Dosimetry

April 24, 2026
Author(s)
Pragya Shrestha, Kin Cheung, Robert Gougelet, Stephen Moxim, Ileana Pazos, Jason Campbell
The demand for portable, versatile, cost-effective and high-performance tools for radiation dosimetry has increased in recent years. The development of a new, highly portable electron spin resonance (ESR) instrument represents a signifi-cant breakthrough

Spin excitation continuum from degenerate states in the mixed ferro-antiferromagnetic exchange system CeMgAl11O19

March 6, 2026
Author(s)
Bin Gao, Tong Chen, Chunxaio Liu, Mason Klemm, Shu Zhang, Zhen Ma, Xianghan Xu, CHOONGJAE WON, Gregory McCandless, Karthik Rao, Naoki Murai, Seiko Ohira-Kawamura, Stephen Moxim, Jason Ryan, Xiaozhou Huang, Xiaoping Wang, Manh Duc Le, Emilia Morosan, Julia Chan, Sang-Wook Cheong, Oleg Tchernyshyov, Leon Balents, Pengcheng Dai
In magnetically ordered insulators, elementary quasiparticles manifest as spin waves - collective motions of localized magnetic moments that propagate through the lattice - observed via inelastic neutron scattering. In effective spin- 1/2 systems where

Spectroscopy of photoionization from the 1E singlet state in nitrogen-vacancy centers in diamond

October 17, 2024
Author(s)
Sean Blakley, Thuc Mai, Stephen Moxim, Jason Ryan, Adam Biacchi, Angela Hight Walker, Robert McMichael
The 1E—1A1 singlet manifold of the negatively charged nitrogen vacancy (NV −) center in diamond plays a central role in the quantum information and quantum sensing applications of the NV − center. However, the energy of this manifold within the diamond

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

April 16, 2024
Author(s)
Stephen Moxim, Nicholas Harmon, Kenneth Myers, James P Ashton, Elias Frantz, Michael Flatte, Patrick Lenahan, Jason Ryan
The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics

May 15, 2023
Author(s)
Patrick Lenahan, Elias Frantz, Sean King, Mark Anders, Stephen Moxim, James P Ashton, Kenneth Myers, Michael Flatte, Nicholas Harmon
A relatively simple addition to many widely utilized semiconductor device characterization techniques can allow one to identify much of the atomic scale structure of point defects which play important roles in the electronic properties of the devices under
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