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Search Publications by: Stephen Moxim (Fed)

Displaying 1 - 2 of 2

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics

May 15, 2023

Author(s)

Patrick Lenahan, Elias Frantz, Sean King, Mark Anders, Stephen Moxim, James P Ashton, Kenneth Myers, Michael Flatte, Nicholas Harmon

A relatively simple addition to many widely utilized semiconductor device characterization techniques can allow one to identify much of the atomic scale structure of point defects which play important roles in the electronic properties of the devices under

Combining Electrically Detected Magnetic Resonance Techniques to Study Atomic-Scale Defects Generated by Hot-Carrier Stressing in HfO2/SiO2/Si Transistors

April 12, 2023

Author(s)

Stephen Moxim, James P Ashton, Mark Anders, Jason Ryan

This work explores the atomic-scale nature of defects within hafnium dioxide/silicon dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are studied via electrically detected magnetic resonance (EDMR) through both