Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors

Published

March 27, 2024

Author(s)

Stephen Moxim, James Ashton, Mark Anders, Nathaniel Lawson, Jason Ryan

Abstract

We identify two distinct atomic-scale defect responses following hot carrier stressing of HfO2 based metal-oxide-semiconductor field-effect transistors (MOSFETs). Revealed through various electron spin based magnetic resonance techniques, including spin dependent charge pumping (SDCP) and spin dependent tunneling (SDT), we describe in detail the physical and chemical nature of the two defect responses. Depending on the specific MOSFET biasing configuration and the response magnitude of each defect type, we detect magnetic resonance spectra originating from recombination at defect centers located precisely at the silicon/oxide interface, trap assisted tunneling current through defects located in the oxide bulk, or some combination of both. The results are correlated to and quantified by purely electrical based (non-resonant) measurements of MOSFET charge pumping (CP) and gate leakage behavior. Finally, the non-resonant electrical measurements include deconvolution of the two competing (CP and leakage) mechanisms via frequency modulated CP techniques.

Proceedings Title

Proceedings of the International Integrated Reliability Workshop

Conference Dates

October 8-12, 2023

Conference Location

Fallen Leaf Lake, CA, US

Conference Title

International Integrated Reliability Workshop

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/IIRW59383.2023.10477645

Local Download

Keywords

charge pumping, leakage current, defects, electrically detected magnetic resonance, hot carrier stress

Citation

Moxim, S. , Ashton, J. , Anders, M. , Lawson, N. and Ryan, J. (2024), Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors, Proceedings of the International Integrated Reliability Workshop, Fallen Leaf Lake, CA, US, [online], https://doi.org/10.1109/IIRW59383.2023.10477645, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956850 (Accessed October 6, 2025)