May 6, 2026
Author(s)
Nikki Ebadollahi, Christian Pederson, Saumya Choudhary, Marcelo Davanco, Pradeep Namboodiri, Kartik Srinivasan, Aaron Katzenmeyer, Joshua Pomeroy
By engineering silicon color center (CC) embedded p-i-n junctions, we achieve telecom-band electroluminescence and identify optimal device geometries. We aim to integrate CCs with photonic cavities toward efficient, electrically-driven single-photon