NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Anthony McFadden (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 6 of 6

Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

January 22, 2025
Author(s)
Raymond Simmonds, Sudhir Sahu, Trevyn Larson, Florent Lecocq, Tongyu Zhao, Anthony McFadden
The application of parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins for use in superconducting circuits is explored by evaluating the performance of superconducting lumped element resonators and transmon qubits. High

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

September 15, 2020
Author(s)
Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrom
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor
Was this page helpful?