Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Kevin L. Silverman (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 76 - 100 of 102

High-resolution spectral hole burning in InGaAs/GaAs quantum dots

February 10, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of

Carrier Dynamics and Homogeneous Broadening in Quantum Dot Waveguides

January 1, 2005
Author(s)
Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff, Benjamin Klein,
Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.

Mode-Locked Erbium/Ytterbium Co-Doped Waveguide Laser

May 1, 2001
Author(s)
John B. Schlager, Berton Callicoatt, Kevin L. Silverman, Richard Mirin, Norman Sanford, D. L. Veasey
Picosecond pulses are generated from a passively mode-locked ER3+/Yb3+ co-doped planar waveguide laser in an extended cavity configuration with a semiconductor saturable absorber mode locker. Average output power exceeds 8 mW and is expected to increase

Multimode Lasing at Room Temperature from InGaAs/GaAs Quantum Dot Lasers

January 1, 2001
Author(s)
Benjamin D. Klein, Kevin L. Silverman, Richard Mirin
We demonstrate InGaAs/GaAs quantuum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate

Single-frequency and Mode-locked Er/Yb Co-doped Waveguide Lasers

January 1, 2001
Author(s)
Berton Callicoatt, John B. Schlager, Kevin L. Silverman, Robert K. Hickernell, Richard P. Mirin, Norman A. Sanford, Joseph S. Hayden, Samuel D. Conzone, Robert D. Simpson
We present results for single-frequency and mode-locked Er/Yb co-doped waveguide lasers. The single-frequency DBR waveguide lasers have output power in excess of 80 mW with laser linewidth of 17 kHz. The passively mode-locked waveguide lasers produce
Was this page helpful?