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Search Publications by: Emily Bittle (Fed)

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Displaying 26 - 28 of 28

Integration of Redox-Active Diruthenium-based Molecular Layer onto Electrodes for Memory Device Applications

November 10, 2016
Author(s)
Sujitra J. Pookpanratana, Hao Zhu, Joseph W. Robertson, Sean Natoli, Emily G. Bittle, Curt A. Richter, Tong Ren, Qiliang Li, Christina A. Hacker
Attaching and integrating electrochemically-active molecules to a variety of different surfaces is of importance for applications in catalysis, memory devices, and molecular electronics. With the increasing demand for personal electronics, growth in Flash

Mobility overestimation due to gated contacts in organic field-effect transistors

March 10, 2016
Author(s)
Emily G. Bittle, David J. Gundlach, Oana Jurchescu, James I. Basham, Thomas Jackson
Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide

Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

February 12, 2016
Author(s)
Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker
Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached