U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Sujitra Pookpanratana (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 71

Microscopic-scale defect analysis on b-Ga2O3 through microscopy

June 12, 2025
Author(s)
Minyeong Kim, Andrew Winchester, Alline Myers, Edwin Heilweil, Ory Maimon, Wei-Chang Yang, Sang-Mo Koo, Qiliang Li, Sujitra Pookpanratana
β-Ga2O3 is a wide bandgap semiconductor with potential for surpassing current-generation high-power device performance and cost-effectiveness, due to its unique properties and availability of large high-quality substrates. However, β-Ga2O3 power

Watching (De)Intercalation of 2D Metals in Epitaxial Graphene: Insight into the Role of Defects

November 2, 2023
Author(s)
Falk Niefind, Qian Mao, Nadire Nayir, Malgorzata Kowalik, Jungjoon Ahn, Andrew Winchester, Chengye Dong, RINU ABRAHAM MANIYARA, Joshua A. Robinson, Adri van Duin, Sujitra Pookpanratana
The de-intercalation processes of 2D Ag and 2D Ga from the graphene-SiC interface was tracked using full-field photoemission electron microscopy. The intercalation "windows" are observed in both systems and follow very different dynamics. The de- and re

Imaging local luminescence variations in CdSe0.1Te0.9 thin films grown by the colossal grain growth process.

August 4, 2023
Author(s)
Ganga Neupane, Andrew Winchester, Nicolas Marquez Peraca, David Albin, Joel Duenow, Matthew Reese, Sujitra Pookpanratana, Susanna Thon, Behrang Hamadani
Clear visualization and understanding of luminescence properties of grain interiors and grain boundaries in polycrystalline thin-film photovoltaic materials are crucial to achieving high-performance solar cells. Luminescence-based measurements, for example

Measurement and Gate-Voltage Dependence of Channel and Series Resistances in Lateral Depletion-Mode b-Ga2O3 MOSFETs

June 9, 2023
Author(s)
Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Kin (Charles) Cheung, Sujitra Pookpanratana, Qiliang Li
Lateral depletion-mode, beta-phase gallium oxide (β-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-drain spacings of 3 µm, 8 µm, and 13 µm are studied using a modified Transfer Length Method (TLM) to obtain sheet

Alternatives to aluminum gates for silicon quantum devices: Defects and strain

September 15, 2021
Author(s)
Ryan Stein, Zachary Barcikowski, Sujitra Pookpanratana, Joshua M. Pomeroy, Michael Stewart
Gate-defined quantum dots (QD) benefit from the use of small grain size metals for gates materials because it aids in shrinking the device dimensions. However, it is not clear what differences arise with respect to process-induced defect densities and

Nonvolatile memory based on redox-active Ruthenium molecular monolayers

October 14, 2019
Author(s)
Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x

Contact and Non-Contact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

September 24, 2018
Author(s)
Adam J. Biacchi, Son T. Le, Brian G. Alberding, Joseph A. Hagmann, Sujitra J. Pookpanratana, Edwin J. Heilweil, Curt A. Richter, Angela R. Hight Walker
Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made towards the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it

Controllable Wide-range n- and p-Doping of Monolayer Group 6 Transition-metal Disulfides and Diselenides

July 30, 2018
Author(s)
Siyuan Zhang, Heather M. Hill, Curt A. Richter, Angela R. Hight Walker, Barlow Stephen, Seth Marder, Christina A. Hacker, Sujitra J. Pookpanratana
Developing processes to controllably dope transition-metal dichalcogenides (TMDs) is critical to achieving commercial integration for optical and electrical applications. In this study, molecular reductants and oxidants are introduced onto a series of

Electronic Properties and Structure of Single Crystal Perylene

June 6, 2018
Author(s)
Sujitra J. Pookpanratana, Katelyn Goetz, Emily G. Bittle, Hamna Haneef, Lin You, Christina A. Hacker, Steven W. Robey, Oana Jurchescu, Ruslan Ovsyannikov, Erika Giangrisostomi
The transport properties of electronic devices made from single crystalline molecular semiconductors outperform those composed of thin-films. To further understand the superiority of these extrinsic properties, an understanding of the intrinsic electronic

Contrasting Transport and Electrostatic Properties of Selectively Fluorinated Alkanethiol Monolayers with Embedded Dipoles

February 7, 2018
Author(s)
Robert C. Bruce, Lin You, Anja Forster, Sujitra J. Pookpanratana, Olivia Pomerenk, Han Ju Lee, Maria D. Marquez, Rashid Ghanbaripour, Oussama Zensani, T R. Lee, Christina A. Hacker
Surface dipoles are a powerful tool in interfacial modification for improving device output via energy level matching. Fluorinated alkanethiols show strong promise for these applications as they can generate large and tunable dipoles based on fluorine
Was this page helpful?