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Zn-Se-Cd-S interlayer formation at the CdS/Cu2ZnSnSe4 thin-film solar cell interface

Published

Author(s)

Marcus Baer, Ingrid Repins, Lothar Weinhardt, Jan Alsmeier, Sujitra J. Pookpanratana, Monika Blum, Wanli Yang, Clemens Heske, Regan Wilks, Rommel Noufi

Abstract

The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of different surface-sensitive and near-surface bulk-sensitive electron and x-ray spectroscopies. We find a CdS deposition-induced “redistribution” of elements in the proximity of the CdS/CZTSe interface during interface formation in the chemical bath. In detail, Zn and Se from the CZTSe absorber and Cd and S from the buffer layer seem to form a Zn-Se-Cd-S – containing interlayer. As we do not find any evidence for the formation of S-Zn bonds, but indications for the presence of Cd-S,Se and Cd-Se-Zn bonds at the buffer/absorber interface, we propose the formation of a mixed Cd(S,Se) – (Cd,Zn)Se interlayer. As potential underlying chemical mechanism we suggest an ion exchange mediated by the amine complexes present in the chemical bath.
Citation
ACS Applied Materials and Interfaces
Volume
2

Keywords

kesterites, photovoltaics, X-ray spectroscopy, XPS

Citation

Baer, M. , Repins, I. , , L. , Alsmeier, J. , Pookpanratana, S. , Blum, M. , Yang, W. , Heske, C. , Wilks, R. and Noufi, R. (2017), Zn-Se-Cd-S interlayer formation at the CdS/Cu2ZnSnSe4 thin-film solar cell interface, ACS Applied Materials and Interfaces, [online], https://doi.org/10.1021/acsenergylett.7b00140 (Accessed September 17, 2021)
Created June 14, 2017, Updated November 10, 2018