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Search Publications by: Yaw S. Obeng (Fed)

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Displaying 76 - 86 of 86

US Anti-Counterfeiting Standards Development Activities: An Overview

December 1, 2010
Author(s)
Yaw S. Obeng, Eric D. Simmon, YaShian Li-Baboud
Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effective

Semiconductor Microelectronics and Nanoelectronics Programs

July 1, 2010
Author(s)
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The

Semiconductor Microelectronics and Nanoelectronics Programs

July 13, 2009
Author(s)
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The

Identity management standards for product life cycle of electronic parts

September 10, 2008
Author(s)
YaShian Li-Baboud, Eric D. Simmon, Yaw S. Obeng
The high profit opportunities, the diffused outsourcing of manufacturing and the structure of distribution networks make the electronics and its components susceptible to counterfeiting. Distinguishing the genuine article from counterfeit is increasingly

Strategies for Closing the ITRS Funding Gap

August 18, 2008
Author(s)
Yaw S. Obeng, Stephen Knight, Joaquin (. Martinez
For over 35 years, each IC generation has doubled the transistor count while cutting the cost per function in half. This progress, described by Moore's Law, has resulted primarily from scaling device dimensions and wafer size. In reality, the 'Moore's Law'

Semiconductor Microelectronics and Nanoelectronics Programs

July 1, 2008
Author(s)
Stephen Knight, Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling rapid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The

ECS Transactions

May 18, 2008
Author(s)
Yaw S. Obeng, Stephen Knight, Joaquin (. Martinez
Nanoelectronics require the introduction of several new uncharacterized material(s) combinations and new processing techniques. The critical metrology and characterization needs of the nanoelectronics industry are being addressed with a broad range of

Nanoporous Ultra Low-Dielectric Constant Organosilicates Templated by Triblock Copolymers

January 1, 2002
Author(s)
S Y. Yang, P A. Mirau, C S. Pai, O Nalamasu, E Reichmanis, J C. Pai, Yaw S. Obeng, J Seputro, Eric K. Lin, Hae-Jeong Lee, J Sun, D Gidley
Triblock polymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO), are used as molecular templates in poly(methyl silsesquioxane) (MSQ) matrices to fabricate nanoporous organosilicates. It is found that the fast solvent

Design of a Nanoporous Ultra Low-Dielectric Constant Organosilicate

January 1, 2001
Author(s)
S Y. Yang, C S. Pai, O Nalamasu, E Reichmanis, P Mirau, Yaw S. Obeng, J Seputro, Eric K. Lin, V. J. Lee
A new class of organosilicate has been developed that can attain an ultra low-dielectric constant, k of less than 2.0, with high dielectric breakdown strength (> 2 MV/cm). In this approach, a series of triblock polymers, poly(ethylene oxide-b-propylene