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Design of a Nanoporous Ultra Low-Dielectric Constant Organosilicate



S Y. Yang, C S. Pai, O Nalamasu, E Reichmanis, P Mirau, Yaw S. Obeng, J Seputro, Eric K. Lin, V. J. Lee


A new class of organosilicate has been developed that can attain an ultra low-dielectric constant, k of less than 2.0, with high dielectric breakdown strength (> 2 MV/cm). In this approach, a series of triblock polymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO), are used as sacrificial materials in poly(methyl silsesquioxane) (MSQ) to generate pores when heated to 400 oC. It is found from small angle neutron scattering (SANS) that these materials have extremely small pores, on the order of 1 nm. Additionally, these low k materials exhibit high mechanical strength with the Young's modulus 3 GPa.
International Conference on Polymers in Electronic Packaging


low-k dielectric, nanoporous thin film, organosilicate, silsesquioxane, small angle neutron scattering, triblock copolymers


Yang, S. , Pai, C. , Nalamasu, O. , Reichmanis, E. , Mirau, P. , Obeng, Y. , Seputro, J. , Lin, E. and Lee, V. (2001), Design of a Nanoporous Ultra Low-Dielectric Constant Organosilicate, International Conference on Polymers in Electronic Packaging, [online], (Accessed April 14, 2024)
Created December 31, 2000, Updated October 12, 2021