Design of a Nanoporous Ultra Low-Dielectric Constant Organosilicate

Published

January 1, 2001

Author(s)

S Y. Yang, C S. Pai, O Nalamasu, E Reichmanis, P Mirau, Yaw S. Obeng, J Seputro, Eric K. Lin, V. J. Lee

Abstract

A new class of organosilicate has been developed that can attain an ultra low-dielectric constant, k of less than 2.0, with high dielectric breakdown strength (> 2 MV/cm). In this approach, a series of triblock polymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO), are used as sacrificial materials in poly(methyl silsesquioxane) (MSQ) to generate pores when heated to 400 oC. It is found from small angle neutron scattering (SANS) that these materials have extremely small pores, on the order of 1 nm. Additionally, these low k materials exhibit high mechanical strength with the Young's modulus 3 GPa.

Citation

International Conference on Polymers in Electronic Packaging

Volume

42(1)

Pub Type

Journals

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Keywords

low-k dielectric, nanoporous thin film, organosilicate, silsesquioxane, small angle neutron scattering, triblock copolymers

Citation

Yang, S. , Pai, C. , Nalamasu, O. , Reichmanis, E. , Mirau, P. , Obeng, Y. , Seputro, J. , Lin, E. and Lee, V. (2001), Design of a Nanoporous Ultra Low-Dielectric Constant Organosilicate, International Conference on Polymers in Electronic Packaging, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851922 (Accessed October 10, 2025)