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Search Publications by: Mark D. Stiles (Fed)

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Displaying 276 - 300 of 383

Coercivity in Exchange-Bias Bilayers

January 18, 2001
Author(s)
Mark D. Stiles, Robert D. McMichael
Simulations of magnetic reversal in polycrystalline exchange-bias bilayers exhibit two contributions to the enhanced coercivity found in exchange-bias systems, one due to inhomogeneous reversal and and the other to irreversible transitions in the

Surface and interface effects in the growth of giant magnetoresistance spin valves for ultrahigh-density data-storage applications

January 1, 2001
Author(s)
William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, Robert McMichael, Mark D. Stiles
The current generation of hard disk drives use Giant Magnetoresistance (GMR) spin valves as the read-head because the GMR effect is currently the most sensitive way to detect magnetic fields at submicron length scales and data rates of approximately equal}

The Magnetic Order of Cr in Fe/Cr/Fe(001) Trilayers

January 1, 2001
Author(s)
Daniel T. Pierce, John Unguris, Robert Celotta, Mark D. Stiles
The temperature dependence of the short period oscillatory coupling in Fe/Cr/Fe(001) whisker trilayers, when analyzed in light of recent theory, provides strong evidence that incommensurate spin density wave antiferromagnetic order is induced in the Cr

Gradient Search Method for Orbital-Dependent Density-Functional Calculations

December 15, 2000
Author(s)
R Hyman, Mark D. Stiles, A Zangwill
We describe a gradient search method appropriate for electronic structure problems where the energy functionals are explicitly orbital-dependent. The ground state is found by minimizing the total energy with respect to the scalar and vector potentials that

Exchange Bias Relaxation in CoO-Biased Films

May 1, 2000
Author(s)
Robert McMichael, Chang H. Lee, Mark D. Stiles, F Serpa, P J. Chen, William F. Egelhoff Jr.
Because the memory of the bias direction is carried by the antiferromagnetic order in exchange bias films, the stability of the antiferromagnetic order is critical to the existence of the exchange bias field. Ferromagnetic resonance was used to measure the

Calculation of Spin-Dependent Interface Resistance

January 1, 2000
Author(s)
Mark D. Stiles, David R. Penn
A simple expression for the interface resistance between two materials has been derived by Schep et al. [J. Magn. Magn. Mater. 177, 1166 (1998).] in terms of the transmission probability for electrons at the interface. This approximation is tested for a

Interlayer Exchange Coupling

September 29, 1999
Author(s)
Mark D. Stiles
The extensive research done on interlayer exchange coupling in transition metal multilayers has resulted in a deep understanding of this coupling and a remarkable agreement between theoretical results and measurements. The coupling between two magnetic

Magnetic Reversal of Ultra-Thin Films with Planar Magnetization

August 25, 1999
Author(s)
R Hyman, A Zangwill, Mark D. Stiles
Classical spin simulations are used to study magnetic reversal in ultra-thin (1-6 monolayers) films with planar magnetization and surface roughness typical of epitaxially grown samples. Reduced site symmetry at surface steps leads to strong, local

Solution of the Boltzmann Equation Without the Relaxation Time Approximation

May 15, 1999
Author(s)
David R. Penn, Mark D. Stiles
A method is presented for solving the spatially varying Boltzmann equation without the relaxation time approximation. The solution is compared with that obtained using the relaxation time approximation for free electron solids in the presence of boundaries

Model for Exchange Bias in Polycrystalline Ferromagnet-Antiferromagnet Bilayers

February 1, 1999
Author(s)
Mark D. Stiles, Robert D. McMichael
Polycrystalline ferromagnet-antiferromagnet bilayers exhibit a wide range of interesting magnetic effects. This paper describes a model for these bilayers which explains not only the unidirectional anisotropy that gives rise to the well known shifted

Exchange Bias Relaxation in CoO-Biased Films

January 1, 1999
Author(s)
Robert McMichael, C Lee, Mark D. Stiles, F Serpa, P J. Chen, William F. Egelhoff Jr.
Because the memory of the bias direction is carried by the antiferromagnetic order in exchange biased films, the stability of the antiferromagnetic order is critical to the existence of the exchange bias field. Ferromagnetic resonance was used to measure