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Search Publications by: Mark D. Stiles (Fed)

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Displaying 251 - 275 of 383

Spin Nomenclature for Semiconductors and Magnetic Metals

June 1, 2004
Author(s)
B Jonker, A Hanbicki, Daniel T. Pierce, Mark D. Stiles
The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron

Phenomenological Theory of Current-Induced Magnetization Precession

February 13, 2004
Author(s)
Mark D. Stiles, J Xiao, A Zangwill
We solve appropriate drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate that unpolarized current flow from a non-magnet into a ferromagnet can produce a precession-type instability of the magnetization. The fundamental origin of the

Artifacts that mimic ballistic magnetoresistance

January 1, 2004
Author(s)
William F. Egelhoff Jr., L Gan, Erik B. Svedberg, Cedric J. Powell, Alexander J. Shapiro, Robert McMichael, J Mallett, Thomas P. Moffat, Mark D. Stiles
We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that

Coercivities above 10 kOe in CoPd Superlattices

January 1, 2004
Author(s)
William F. Egelhoff Jr., Cedric J. Powell, L Gan, P J. Chen, H Ettendgui, D Tirosh, Robert McMichael, Mark D. Stiles, J Mallett, Alexander J. Shapiro, John E. Bonevich
We have achieved excellent grain isolation in CoPd superlattices by using 10 nm Au as both an underlayer and an overlayer and diffusing Au into the grain boundaries by annealing for approximately equal to} 30 min. at 300 degrees C. The grain isolation

Real-Space Imaging of Structural Transitions in the Vortex Lattice of V 3 Si

October 6, 2003
Author(s)
C Sosolik, Joseph A. Stroscio, Mark D. Stiles, E Hudson, Steven R. Blankenship, Aaron P. Fein, Robert Celotta
The predictions of nonlocal London theory are confirmed by real-space measurements of the hexagonal to nearly square transition in the vortex lattice structure of V 3Si. We observe that the lattice transforms from hexagonal to nearly square over the field

Current-Induced Spin-Wave Excitations in a Single Ferromagnetic Layer

May 1, 2003
Author(s)
Yi Ji, C L. Chien, Mark D. Stiles
Evidence for a current induced spin-transfer torque effect has been investigated in a series of point contacts to single ferromagnetic layers. At specific current densities, abrupt resistance changes, similar to those attributed to current-induced spin

Current-Induced Spin-Wave Excitations in a Single Ferromagnetic Layer

March 14, 2003
Author(s)
Yi Ji, C Chien, Mark D. Stiles
Evidence for a current induced spin-transfer torque effect has been investigated in a series of point contacts to single ferromagnetic layers. At specific current densities, abrupt resistance changes, similar to those attributed to current-induced spin

Anatomy of Spin-Transfer Torque

July 1, 2002
Author(s)
Mark D. Stiles, A Zangwill
Spin-transfer torques occur in magnetic heterostructures because the transverse component of a spin current that flows from a non-magnet into a ferromagnet is absorbed at the interface. We demonstrate this fact explicitly using free electron models and

Spin Polarization of Injected Electrons

May 17, 2002
Author(s)
William F. Egelhoff Jr., Mark D. Stiles, David P. Pappas, S Alvarado, J Gregg, J Bland, R A. Buhrman, Daniel T. Pierce, J Byers, M Johnson, B Jonker
A recent paper in Science made the claim of 92% polarization for the injection spin polarized electrons from a Ni scanning tunneling microscopy (STM) tip into GaAs(110). Actually they state their result as 92% efficiency for the injection of 100%

Non-collinear spin transfer in Co/Cu/Co multilayers

May 15, 2002
Author(s)
Mark D. Stiles, A Zangwill
We report semi-classical calculations of current polarization, spin accumulation, magnetoresistance, and spin transfer torques in Co/Cu/Co multilayers. A 2 x 2 matrix Boltzman equation is used because the Co layer magnetizations are not necessarily

Spin Polarization of Injected Electrons

May 1, 2002
Author(s)
William F. Egelhoff Jr., Mark D. Stiles, David P. Pappas, Daniel T. Pierce, J M. Byers, J M. Johnson, B T. Jonker, S F. Alvarado, J F. Gregg, J A. Bland, R Buhrman
A recent paper in Science made the claim of 92% polarization for the injection spin polarized electrons from a Ni scanning tunneling microscopy (STM) tip into GaAs(110). Actually they state their result as 92% efficiency for the injection of 100%

Spin-Other-Orbit Interaction and Magnetocrystalline Anisotropy

August 23, 2001
Author(s)
Mark D. Stiles, S Halilov, R Hyman, A Zangwill
We report the effect of the two-body, spin-other-orbit interaction on the magnetocrystalline anisotropy energy of the 3d transition metals. The relevant energy differences were computed for bcc Fe, fcc Ni, and hcp Co using the linearized augmented plane

Surface and Interface Effects in the Growth of Giant Magnetoresistance Spin Valves for Ultrahigh-Density Data-Storage Applications

August 1, 2001
Author(s)
William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, Robert D. McMichael, Mark D. Stiles
The current generation of hard disk drives use Giant Magnetoresistance (GMR) spin valves as the read-head because the GMR effect is currently the most sensitive way to detect magnetic fields at submicron length scales and data rates of {approximately equal