Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Spin Polarization of Injected Electrons

Published

Author(s)

William F. Egelhoff Jr., Mark D. Stiles, David P. Pappas, Daniel T. Pierce, J M. Byers, J M. Johnson, B T. Jonker, S F. Alvarado, J F. Gregg, J A. Bland, R Buhrman

Abstract

A recent paper in Science made the claim of 92% polarization for the injection spin polarized electrons from a Ni scanning tunneling microscopy (STM) tip into GaAs(110). Actually they state their result as 92% efficiency for the injection of 100% importance for the emerginging field of Apintronics. If true, it would suggest that the field is rapidly closing in on the key goal of 100% efficiency. However, we wish to inform the Science readership that the claim is by no means substantiated by a close examination of the work, and in fact serious errors in the analysis imply that the actual polarization was much less than 92%. Since the tip is not 100% spin polarized, it makes no sense to break this polarization into a tip polarization times an efficiency.
Citation
Science
Volume
296
Issue
No. 5571

Keywords

gallium arsnide tunneling nickel, spin polarization

Citation

Egelhoff, W. , Stiles, M. , Pappas, D. , Pierce, D. , Byers, J. , Johnson, J. , Jonker, B. , Alvarado, S. , Gregg, J. , Bland, J. and Buhrman, R. (2002), Spin Polarization of Injected Electrons, Science (Accessed December 6, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 1, 2002, Updated February 17, 2017