March 21, 2011
Author(s)
Joseph L. Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew Herzing, Madelaine H. Hernandez, Christina Hacker, Jan Obrzut, Lee Richter, Curt Richter
In order to study the conduction and loss mechanisms behind their operation, flexible sol-gel based memristors were fabricated with differing oxide film thicknesses and device sizes. XPS, TEM, EELS, and VASE measurements indicated the oxide was amorphous