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Search Publications

NIST Authors in Bold

Displaying 1851 - 1875 of 2174

Modified Field Studies for CSCW Systems

January 1, 1999
Author(s)
Michelle P. Steves, Jean C. Scholtz
We, at the National Institute of Standards and Technology (NIST), are in the process of instituting and assessing collaboration technologies for manufacturing applications. This position paper for the Computer Supported Cooperative Work (CSCW) Evaluation

Radiationless Resonant Raman Scattering at the Ar K Edge

January 1, 1999
Author(s)
Thomas W. LeBrun, S H. Southworth, G B. Armen, M A. MacDonald, Y Azuma
Partial cross sections for Ar K-LZL3(1 D2)np, n=4 and 5 spectator Auger states excited by x-ray absorption across the K-edge were measured and compared with calculations based on the theory or radiationless resonant Raman scattering. Core relaxation and

Sources of Error in Absolute Distance Interferometry

January 1, 1999
Author(s)
Jack A. Stone Jr., Alois Stejskal, Lowell P. Howard
In this paper we describe the status of our research on the use of diode lasers for absolute distance interferometry, and we discuss the major sources of uncertainty that limit the accuracy of this technique for distance measurement. We have primarily

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full complement of analytical tools in a fab that would be necessary to identify very small particles and

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full compliment of analytical tools in a fab that would be necessary to identify very small particles and

Tip Characterization for Dimensional Nanometrology

January 1, 1999
Author(s)
John S. Villarrubia
Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imaging artifacts. This

Accuracy Differences Among Photomask Metrology Tools and Why They Matter

December 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimensions (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have different cost, throughput

Calculation of Measurement Uncertainty Using Prior Information

November 1, 1998
Author(s)
Steven D. Phillips, William T. Estler
We describe the use of Bayesian inference to include prior information about the value of the measurand in the calculation of measurement uncertainty. Typical examples show this can, in effect, reduce the expanded uncertainty by up to 85 %. The application

Application of Laser Feedback Metrology to a Hexapod Test Strut

October 1, 1998
Author(s)
M Schmidt-Lange, E Amatucci, Albert J. Wavering
A laser position feedback system has been designed to improve the accuracy of strut positioning for the prototype Ingersoll2 Octahedral Hexapod machine installed at National Institute of Standards and Technology (NIST) (Figure 1). Strut laser feedback

NIST Microform Calibration - How Does It Benefit U.S. Industry?

October 1, 1998
Author(s)
Jun-Feng Song, Theodore V. Vorburger
In microform metrology, complex 3-D surface features in the micrometer range must be quantified for their space and size including dimensions, curves, angles, profile deviations, and alignment errors, as well as surface roughness with measurement

NIST Virtual/Physical Random Profile Roughness Calibration Standards

October 1, 1998
Author(s)
Jun-Feng Song, Christopher J. Evans, Michael L. McGlauflin, Eric P. Whitenton, Theodore V. Vorburger, Y B. Yuan
The NIST (National Institute of Standards and Technology) virtual/physical surface roughness calibration standard consists of physical specimens whose surfaces are manufactured by a numerically controlled diamond-turning process using digitized profiles

Accuracy Differences Among Photomask Metrology Tools--and Why They Matter

September 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimension (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have differing cost, throughput

Case Against Optical Gauge Block Metrology

September 1, 1998
Author(s)
Theodore D. Doiron, Dennis S. Everett, Bryon S. Faust, Eric S. Stanfield, John R. Stoup
The current definition of length of a gage block is a very clever attempt to evade the systematic errors associated with the wringing layer thickness and optical phase corrections. In practice, there are very large systematic operator and surface effects

Minimizing Error Sources in Gage Block Mechanical Comparison Measurements

September 1, 1998
Author(s)
Bryon S. Faust, John R. Stoup, Debra K. Stanfield
Error sources in gage block mechanical comparisons can range from classical textbook examples (thermal gradients, correct temperature value, and correct master value) to a completely counter-intuitive example of diamond probe tip wear at low applied force

Accuracy and Traceability in Dimensional Measurements

June 1, 1998
Author(s)
James E. Potzick
Dimensional measurements of importance to microlithography include feature sizes and feature placement on photomasks and wafers, overlay eccentricities, defect and particle sizes on masks and wafers, and many others. A common element is that the object

Developing a Method to Determine Linewidth Based on Counting the Atom-Spacings Across a Line

June 1, 1998
Author(s)
Richard M. Silver, Carsten P. Jensen, V W. Tsai, Joseph Fu, John S. Villarrubia, E C. Teague
We are developing the instrumentation and prototype samples at NIST to enable the counting of atom-spacings across linewidth features etched in silicon. This is an effort to allow the accurate counting of atom-spacings across a feature in a controlled

Measurement of Pitch and Width Samples with the NIST Calibrated Atomic Force Microscope

June 1, 1998
Author(s)
Ronald G. Dixson, R Koning, Theodore V. Vorburger, Joseph Fu, V W. Tsai
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales
Displaying 1851 - 1875 of 2174
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