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NIST Authors in Bold

Displaying 1851 - 1875 of 2189

Measurements and Predictions of Light Scattering by Coatings

May 1, 1999
Author(s)
Theodore V. Vorburger, Egon Marx, M E. McKnight, Maria Nadal, P Y. Barnes, Alan Keith Thompson, Michael Galler, Fern Y. Hunt, Mark R. VanLandingham
We show comparisons between calculations and measurements of angle-resolved light scattering distributions from clear dielectric, isotropic coatings. The calculated distributions are derived from topography measurements performed with scanning white light

The NIST Length Scale Interferometer

May 1, 1999
Author(s)
John S. Beers, William B. Penzes
The National Institute of Standards and Technology (NIST) interferometer for measuring graduated length scales has been in use since 1965. It was developed in response to the redefinition of the meter in 1960 from the prototype platinum-iridium bar to the

Improving Kinematic Touch Trigger Probe Performance

April 1, 1999
Author(s)
Steven D. Phillips, William T. Estler
Kinematic touch trigger probes are widely used on CMMs. This article gives CMM users advice on how to minimize the systematic errors associated with this class of probes.

Optical Linewidth Models - Then and Now

March 1, 1999
Author(s)
Robert D. Larrabee, Richard M. Silver, M P. Davidson
In the late 1970's Dr. Diana Nyyssonen demonstrated that the National Institute of Standards and Technology (NIST) could optically calibrate photomask linewidth standards that were narrower than the classical resolution limit of a conventional bright-field

Experimental Study of the NaK (3 1PI) State

February 1, 1999
Author(s)
E Laub, J Huennekens, R K. Namiotka, Zeina J. Kubarych, I Prodan, J La civita, S Webb, I Mazsa
We report the results of an optical-optical double resonance experiment to determine the NaK (3 1PI) state potential energy curve. In the first step, a narrow band cw laser (PUMP) is tuned to line center of a particular 2(A) (1 SIGMA+)(v?, J?) 1(X) (1

A Constrained Monte Carlo Simulation Method for the Calculation of CMM Measurement Uncertainty

January 1, 1999
Author(s)
Steven D. Phillips, Bruce R. Borchardt, Daniel S. Sawyer, William T. Estler, K Eberhardt, M Levenson, Marjorie A. McClain, Ted Hopp
We describe a Monte Carlo simulation technique where known information about a metrology system is employed as a constraint to distinguish the errors associated with the instrument under consideration from the set of all possible instrument errors. The

Algorithms for Calculating Single-Atom Step Heights

January 1, 1999
Author(s)
Joseph Fu, V W. Tsai, R Koning, Ronald G. Dixson, Theodore V. Vorburger
Recently, measuring Si(111) single atomic steps prompted us to investigate the measuring technique. The section technique is the most popular method for measuring the height. By measuring a simulated Si(111) atomic step, we have found it could have an

Diode Lasers in Length Metrology: Application to Absolute Distance Interferometry

January 1, 1999
Author(s)
Jack A. Stone Jr., Lowell P. Howard, Alois Stejskal
Diode lasers are becoming increasingly important in length metrology. In particular, the tunability of diode lasers makes them attractive for applications such as absolute distance interferometry (ADI). In this paper we describe the current status of our

Measurement Uncertainty and Noise in Nanometrology

January 1, 1999
Author(s)
James E. Potzick
The measurement of feature sizes on integrated circuit photomasks and wafers is an economically important and technically challenging application of nanometrology. The displacement measuring laser heterodyne interferometer is a popular tool in such

Measurement Uncertainty and Uncorrected Bias

January 1, 1999
Author(s)
Steven D. Phillips, K Eberhardt, William T. Estler
This paper discusses the distinction between measurement uncertainty, measurement errors and their role in the calibration process. The issue of including uncorrected bias is addressed and a method to extend the current ISO Guide to the Expression of

Modified Field Studies for CSCW Systems

January 1, 1999
Author(s)
Michelle P. Steves, Jean C. Scholtz
We, at the National Institute of Standards and Technology (NIST), are in the process of instituting and assessing collaboration technologies for manufacturing applications. This position paper for the Computer Supported Cooperative Work (CSCW) Evaluation

Radiationless Resonant Raman Scattering at the Ar K Edge

January 1, 1999
Author(s)
Thomas W. LeBrun, S H. Southworth, G B. Armen, M A. MacDonald, Y Azuma
Partial cross sections for Ar K-LZL3(1 D2)np, n=4 and 5 spectator Auger states excited by x-ray absorption across the K-edge were measured and compared with calculations based on the theory or radiationless resonant Raman scattering. Core relaxation and

Sources of Error in Absolute Distance Interferometry

January 1, 1999
Author(s)
Jack A. Stone Jr., Alois Stejskal, Lowell P. Howard
In this paper we describe the status of our research on the use of diode lasers for absolute distance interferometry, and we discuss the major sources of uncertainty that limit the accuracy of this technique for distance measurement. We have primarily

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full complement of analytical tools in a fab that would be necessary to identify very small particles and

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full compliment of analytical tools in a fab that would be necessary to identify very small particles and

Tip Characterization for Dimensional Nanometrology

January 1, 1999
Author(s)
John S. Villarrubia
Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imaging artifacts. This

Accuracy Differences Among Photomask Metrology Tools and Why They Matter

December 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimensions (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have different cost, throughput

Calculation of Measurement Uncertainty Using Prior Information

November 1, 1998
Author(s)
Steven D. Phillips, William T. Estler
We describe the use of Bayesian inference to include prior information about the value of the measurand in the calculation of measurement uncertainty. Typical examples show this can, in effect, reduce the expanded uncertainty by up to 85 %. The application
Displaying 1851 - 1875 of 2189
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