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Displaying 1676 - 1700 of 1733

Indentation Creep Behavior of a Direct-Filling Silver Alternative to Amalgam

December 1, 1998
Author(s)
Hockin D. Xu, Kate Liao, F Eichmiller
Amalgam creep has been identified as a key parameter associated with marginal breakdown and corrosion. Recently, a consolidated silver powder was proposed as a mercury-free alternative to amalgam. The aim of the present study was to characterize the time

Mechanical Properties of Si 02 and Si 3 N 4 Coatings: A BAM/NIST Cooperative Project

September 24, 1998
Author(s)
U Beck, Douglas T. Smith, G Reiners, S J. Dapkunas
Mechanical properties, i.e., hardness and elastic modulus, of amorphous Si 02 and Si 3N^4^ PE-CVD coatings have been studied for two coating thicknesses (0.1 υm and 1.0 υm) and two substrate materials (fused silica, i.e., Herasil, and borosilicate glass, i

Interface Adhesion of E-Glass Fibers in Model Polyisocyanurate Networks

September 23, 1998
Author(s)
Walter G. McDonough, Gale A. Holmes, R C. Peterson
Recent work examining the nature of the failure process of glass/epoxy specimens in the single fiber fragmentation test showed that the matrix exhibited pronounced non-linear viscoelastic behavior during the test, and that the interfacial shear strength

Electroacoustic Analysis in Processing of Advanced Ceramics

September 1, 1998
Author(s)
Vincent A. Hackley, U Paik
Finely dispersed systems such as emulsions and colloidal suspensions are recognized as playing a critical role in many important industrial processes. Many of these systems are quite concentrated, and significant needs exist to develop measurement

Multiple Small-Angle Neutron Scattering

September 1, 1998
Author(s)
Gabrielle G. Long, Susan Krueger, Andrew J. Allen
Over the past decade, a multiple small-angle neutron scattering (MSANS) formalism has been developed to enable researchers to derive microstructural parameters from multiply-scattered small-angle neutron data. The MSANS formalism is particularly useful in

Diffraction Anomalous Fine Structure Study of Strained GA 1-x In x As on GaAs(001)

August 20, 1998
Author(s)
Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland
Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In 0.22As layer grown coherently on GaAs(001). This
Displaying 1676 - 1700 of 1733
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