Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Published

January 1, 1999

Author(s)

Lawrence H. Robins, Albert J. Paul, C A. Parker, J C. Roberts, S M. Bedair, E L. Piner, N A. El-Masry

Abstract

In_xGa_1-xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also also present in the lower-x films (x0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.

Citation

Mrs Internet Journal of Nitride Semiconductor Research

Volume

4S1

Pub Type

Journals

Keywords

compositional inhomogeneity, excitation spectroscopy, indium gallium nitride, nitride semiconductors, optical transmittance, phase separation, photoluminescence, Raman spectroscopy, thin films

Citation

Robins, L. , Paul, A. , Parker, C. , Roberts, J. , Bedair, S. , Piner, E. and El-Masry, N. (1999), Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films, Mrs Internet Journal of Nitride Semiconductor Research (Accessed April 19, 2024)