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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Published

Author(s)

Lawrence H. Robins, Albert J. Paul, C A. Parker, J C. Roberts, S M. Bedair, E L. Piner, N A. El-Masry

Abstract

InxGa1-xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also also present in the lower-x films (x0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.
Citation
Mrs Internet Journal of Nitride Semiconductor Research
Volume
4S1

Keywords

compositional inhomogeneity, excitation spectroscopy, indium gallium nitride, nitride semiconductors, optical transmittance, phase separation, photoluminescence, Raman spectroscopy, thin films

Citation

Robins, L. , Paul, A. , Parker, C. , Roberts, J. , Bedair, S. , Piner, E. and El-Masry, N. (1999), Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films, Mrs Internet Journal of Nitride Semiconductor Research (Accessed April 13, 2024)
Created January 1, 1999, Updated October 7, 2019