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Displaying 1601 - 1625 of 3439

Near-Edge X-ray Absorption Fine Structure Spectroscopy as a Tool for Investigating Nanomaterials

January 1, 2007

Author(s)

T Hemraj-Benny, S Banerjee, S Sambasivan, Daniel A. Fischer, J A. Misewich, S S. Wong

Wetting Behavior on Microscale Wrinkled Surfaces

January 1, 2007

Author(s)

Jun Y. Chung, Christopher M. Stafford

We present a systematic study of the wetting behavior on the anisotropic microstructure having a simple sinusoidal profile. The micro-patterned surface was generated by using the buckling-based technique, and its wetting properties were examined by contact

Thickness dependence of microstructure in semiconducting films of an oligofluorene derivative

December 27, 2006

Author(s)

Dean M. DeLongchamp, M -. Ling, Yeon-Gil Jung, Daniel A. Fischer, M E. Roberts, Eric K. Lin, Zhenan Bao

Surfaces of Fluorinated Pyridinium Block-Copolymers with Enhanced Antibacterial Activity

December 19, 2006

Author(s)

Sitaraman Krishnan, R J. Ward, A Hexemer, K E. Sohn, K L. Lee, E R. Angert, Daniel A. Fischer, E J. Kramer, C K. Ober

Changes in Electronic Structure of the Electrochemically Li-ion Deintercalated LiNiO2 System Investigated by Soft X-ray Absorption Spectroscopy

December 7, 2006

Author(s)

W S. Yoon, Kyung Y. Chung, James McBreen, Daniel A. Fischer, Xiao-Qing Yang

First Principles Phase Diagram Calculations for the Wurtzite-Structure Systems A1N-GaN, A1N-InN and GAN-InN

December 1, 2006

Author(s)

Benjamin P. Burton, A Walle, Ursula R. Kattner

First Principles Phase Diagram Calculations for the Wurtzite-Structure Systems AlN-GaN, AlN-InN and GaN-InN

December 1, 2006

Author(s)

A Van de Walle, Benjamin P. Burton, Ursula R. Kattner

Because of their wide direct band-gaps, and excellent mechanical properties [1], wurtzite structure AlN (6.28 eV, [2]), GaN (3.5 eV, [3]) and InN (1.89 eV [4], 0.7 eV [5]) are widely used as components of light emitting diodes. Alloying, is used to tune

Phase Formation, Crystal Chemistry, and Properties in the Magnetic Dielectric System Bi2O3-Fe2O3-Nb2O5

December 1, 2006

Author(s)

M W. Lufaso, Terrell A. Vanderah, I M. Pazos, Juan C. Nino, Virgil Provenzano, Peter K. Schenck, Robert S. Roth

High Temperature Superconductor Wires and Tapes

November 26, 2006

Author(s)

M. P. Paranthaman, V Selvamanickam, K Matsumoto, Luigia Gianna, Wei-xian Zhang, P Goyal, Winnie Wong-Ng

High Temperature Superconductor Wires and Tapes was one of the MS&T2006 symposia (October 15-19, 2006; Duke Energy Center, Cincinnati, Ohio) that covered recent advances in the area of high temperature superconductor (HTS) wires and tapes. The symposium

A Universal Relation for Edge Chipping From Sharp Contacts in Brittle Materials and It's Use as a Simple Means of Toughness Evaluation

November 24, 2006

Author(s)

Herzl Chai, Brian R. Lawn

An analysis of chipping fracture in brittle solids is presented. Cracks are introduced into the edges of selected materials, including soda-lime glass and fine-grain ceramics, using a Vickers indenter in monotonic loading. The ensuing chip morphology is

The Influence of NH 3 Anneal on the Crystallization Kinetics of HfO 2 Gate Dielectric Films

November 17, 2006

Author(s)

Patrick S. Lysaght, Joseph Woicik, Brendan Foran, Joel Barnett, Gennadi Bersuker, B H. Lee

HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into

Optimization of SiGe Graded Buffer Defectivity and Throughput by Means of High Growth Temperature and Pre-Threaded Substrates

November 16, 2006

Author(s)

M Erdtmann, M T. Currie, Joseph Woicik, David R. Black

Dislocation glide kinetics dictate in relaxed graded buffers a fundamental opposition between the defectivity and throughput. For state-of-the-art Si-based applications, the trade-off between defect level and wafer cost (inversely related to throughput)

Quantitative depth profiling of photoacid generators in photoresist materials by near-edge x-ray absorption fine structure spectroscopy

November 15, 2006

Author(s)

Vivek M. Prabhu, S Sambasivan, Daniel A. Fischer, Linda K. Sundberg, Robert D. Allen

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