NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Atomic-Resolution Study of Lattice Distortion of a Buried InGa1-xAs Monolayers in GaAs(001)
Published
Author(s)
T L. Lee, M Pillai, Joseph Woicik, G Labanda, P Lyman, S A. Barnett, Michael Bedzyk
Abstract
X-ray standing wave measurements were used to study the strain in one monolayer of pseudobinary alloy InxGa1-xAs buried in GaAs(001). The measured In position along the [001] direction, which exhibits a linear dependence on the In concentration x, supports the validity of macroscopic continuum elasticity theory at the one monolayer limit. A random-cluster calculation using a valence force field was performed to explain the origin of the vertical expansion of the strained layer observed by the experiment. With a cluster constructed for a buried monolayer of InxGa1-xAs in GaAs(001), the calculated As-In-As bond angle and the positions of the first nearest neighbor As atoms of In suggest that the linear dependence of the In height on the In concentration x is a combined result of the As-In-As bond bending and the local lattice relaxation at the GaAs/InxGa1-xAs interfaces. The calculated In-As and Ga-As bond lengths were found to depend weakly on the In concentration, consistent with an earlier calculation for the case of a thick InxGa1-xAs film on GaAs(001).
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
60
Issue
No. 19
Pub Type
Journals
Keywords
monolayer of GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As, random-cluster calculation, x-ray standing wave (XSW)
Lee, T.
, Pillai, M.
, Woicik, J.
, Labanda, G.
, Lyman, P.
, Barnett, S.
and Bedzyk, M.
(1999),
Atomic-Resolution Study of Lattice Distortion of a Buried InGa<sub>1-x</sub>As Monolayers in GaAs(001), Physical Review B (Condensed Matter and Materials Physics)
(Accessed October 15, 2025)