Atomic-Resolution Study of Lattice Distortion of a Buried InGa1-xAs Monolayers in GaAs(001)
T L. Lee, M Pillai, Joseph Woicik, G Labanda, P Lyman, S A. Barnett, Michael Bedzyk
X-ray standing wave measurements were used to study the strain in one monolayer of pseudobinary alloy InxGa1-xAs buried in GaAs(001). The measured In position along the  direction, which exhibits a linear dependence on the In concentration x, supports the validity of macroscopic continuum elasticity theory at the one monolayer limit. A random-cluster calculation using a valence force field was performed to explain the origin of the vertical expansion of the strained layer observed by the experiment. With a cluster constructed for a buried monolayer of InxGa1-xAs in GaAs(001), the calculated As-In-As bond angle and the positions of the first nearest neighbor As atoms of In suggest that the linear dependence of the In height on the In concentration x is a combined result of the As-In-As bond bending and the local lattice relaxation at the GaAs/InxGa1-xAs interfaces. The calculated In-As and Ga-As bond lengths were found to depend weakly on the In concentration, consistent with an earlier calculation for the case of a thick InxGa1-xAs film on GaAs(001).
Physical Review B (Condensed Matter and Materials Physics)
monolayer of GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As, random-cluster calculation, x-ray standing wave (XSW)
, Pillai, M.
, Woicik, J.
, Labanda, G.
, Lyman, P.
, Barnett, S.
and Bedzyk, M.
Atomic-Resolution Study of Lattice Distortion of a Buried InGa<sub>1-x</sub>As Monolayers in GaAs(001), Physical Review B (Condensed Matter and Materials Physics)
(Accessed November 30, 2023)