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Displaying 1551 - 1575 of 4224

A Roadmap to Advance Measurement Science in Robot Dexterity and Manipulation

May 1, 2014
Author(s)
Joseph A. Falco, Jeremy A. Marvel, Elena R. Messina
In order for robots to expand their applicability within manufacturing operations, their dexterity needs to advance considerably. There is active research in many areas that is contributing to creating a new generation of much more dexterous arms and hands

Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water

April 23, 2014
Author(s)
Brent A. Sperling, John Hoang, William A. Kimes, James E. Maslar, Kristen L. Steffens, Nhan V. Nguyen
Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is observed

Methods for improving visibility measurement standards of powered industrial vehicles

February 28, 2014
Author(s)
Roger V. Bostelman, Jochen Teizer, Soumitry J. Ray, Mike Agronin, Dominic Albanese
Poor visibility of powered industrial vehicles, such as forklifts, used in industry is often the cause of accidents that include pedestrians. Current standards allow up to 20% non-visible regions for forklifts where measurement of these regions is

Characterization of InGaN quantum disks in GaN nanowires

February 27, 2014
Author(s)
Alexana Roshko, Roy H. Geiss, John B. Schlager, Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Todd E. Harvey
Catalyst-free GaN nanowires with InGaN quantum disks (QDs) were characterized by scanning/transmission electron microscopy (S/TEM) and photoluminescence. A variety of structures, from QDs with large strain fields to apparently strain free QDs were observed

Laser-assisted atom probe tomography of MBE grown GaN nanowire heterostructures

February 24, 2014
Author(s)
Norman A. Sanford, Paul T. Blanchard, Matthew D. Brubaker, Kristine A. Bertness, John B. Schlager, R Kirchofer, David R. Diercks, Brian Gorman
Laser-assisted atom probe tomography (L-APT) was performed on GaN nanowires (NWs) and axial GaN/InGaN nanowire heterostructures. All samples were grown by MBE on Si(111) substrates. The laser pulse energy (PE) at 355 nm used in L-APT analysis of GaN NWs

Metrological challenges introduced by new tolerancing standards

February 13, 2014
Author(s)
Ed Morse, Yue Peng, Vijay Srinivasan, Craig M. Shakarji
The recent release of ISO has provided designers with a richer set of specification tools for the size of part features, so that various functional requirements can be captured with greater fidelity [2]. However, these tools also bring new challenges and

The U.S. Manufacturing Value Chain: An International Perspective

February 10, 2014
Author(s)
Douglas Thomas
This report uses input-output data from the World Input-Output Database along with the methods developed by Wassily Leontief to track the intermediate goods and services used in national manufacturing industries. Specifically, it examines the extent that

Interoperability for Virtual Manufacturing systems

January 14, 2014
Author(s)
Yung-Tsun Lee, Juyeon Lee, Frank H. Riddick, Donald E. Libes, Deogratias Kibira
Manufacturing systems are often costly to develop and operate. Simulation technology has been demonstrated to be an effective tool for improving manufacturing system design and the efficiency of manufacturing operations and maintenance. However, to use

An Ontology Based Approach to Action Verification for Agile Manufacturing

January 10, 2014
Author(s)
Zeid Kootbally, Stephen B. Balakirsky
Many of today's robotic work cells are unable to detect when an action failure has occurred. This results in faulty products being sent down the line, and/or downtime for the cell as failures are detected and corrected. This article examines a novel
Displaying 1551 - 1575 of 4224
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