April 12, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing