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Displaying 751 - 775 of 1446

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Author(s)
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

Structure and Dynamics Studies of Concentrated Micrometer-Sized Colloidal Suspensions

January 7, 2013
Author(s)
Fan Zhang, Andrew J. Allen, Lyle E. Levine, Jan Ilavsky, Gabrielle G. Long
We present an experimental study of the structural and dynamical properties of concentrated suspensions of a series of different sized polystyrene microspheres dispersed in glycerol for volume fraction concentrations between 10 % and 20 %. The static

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Self-aligned multi-channel silicon nanowire field-effect transistors

December 12, 2012
Author(s)
Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, D. E. Ioannou, Curt A. Richter
Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with standard photolithographic process. The electrical characteristics of SiNW

EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS

November 7, 2012
Author(s)
Richard A. Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David T. Read, Andreas Fehk?hrer, J?rgen Burggraf
An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved performance

Measurement Science for "More-Than-Moore" Technology Reliability Assessments

October 12, 2012
Author(s)
Chukwudi A. Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph Kopanski, Yaw S. Obeng
In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems. We will

Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current

October 7, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Jason P. Campbell, Canute I. Vaz, Jihong Kim, Kin P. Cheung, Helmut Baumgart, Gary Harris
The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET process

Observation of spin-valve effect in Alq3 using a low work function metal

September 7, 2012
Author(s)
Hyuk-Jae Jang, Kurt Pernstich, David J. Gundlach, Oana Jurchescu, Curt A. Richter
We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices exhibit
Displaying 751 - 775 of 1446
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