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Surface Oxidation of a Silicon Powder Studied by X-Ray Photoelectron Spectroscopy and X-Ray Induced Auger Electron Spectroscopy

Author(s)

P S. Wang, T N. Wittberg

Abstract

A commercial silicon powder was studied by x-ray photoelectron spectroscopy (XPS) and x-ray induced Auger electron spectroscopy (XAES). These techniques were used to determine the oxidation kinetics for this powder in the temperature range from 600 to 750 degrees {Celsius}. Both the Si 2p XPS spectra and the Si KLL Auger spectra showed well-resolved peaks from the surface SiO2 layer and from the Si substrate. The results show that there is a ~12 {Angstrom} thick native oxide on the as-received powder. Oxidation rate was observed to be linear at 600, 650, 600, and 750 degrees {Celsius} for heating times up to 4 hours. There was good agreement between the thickness values calculated from the Si KLL AES data and those calculated from the Si 2p XPS data. The activation energy was determined to be 95 + 5 kJ/mol from the Si KLL data and 112 + 10 kJ/mol from the si 2p data.
Citation
Journal of Materials Science

Keywords

Auger electron spectroscopy, silicon powder, surface oxidation, x-ray photoelectron spectroscopy

Citation

Wang, P. and Wittberg, T. (1970), Surface Oxidation of a Silicon Powder Studied by X-Ray Photoelectron Spectroscopy and X-Ray Induced Auger Electron Spectroscopy, Journal of Materials Science (Accessed February 28, 2024)
Created August 26, 2016, Updated February 17, 2017