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Displaying 601 - 625 of 1598

Bound electron nonlinearity beyond the ionization threshold

May 2, 2018
Author(s)
Jared K. Wahlstrand, Sina Zahedpour, Anand Bahl, Miroslav Kolesik, H M. Milchberg
Although high field laser-induced ionization is a fundamental process at the root of many applications, there have been no absolute measurements of its transient rate. Such information is crucial, for example, for understanding the propagation of high

Using Temperature to Reduce Noise in Quantum Frequency Conversion

April 23, 2018
Author(s)
Paulina S. Kuo, Jason S. Pelc, Carsten Langrock, M. M. Fejer
Quantum frequency conversion (QFC) is important in quantum networks to interface nodes operating at different wavelengths and to enable long-distance quantum communication using telecommunications wavelengths. Unfortunately, frequency conversion in actual

Refined Calculations of Synchrotron Radiation for NISTs SURF III Facility

April 16, 2018
Author(s)
Eric L. Shirley, Mitchell L. Furst, Uwe Arp
We have developed a new method for exact calculation of synchrotron radiation for the National Institute of Standards and Technology Synchrotron Ultraviolet Radiation Facility, SURF III. Instead of using the Schwinger formula, which is only an

Candidates to Replace R-12 as a Radiating Gas in Cherenkov Detectors

April 14, 2018
Author(s)
Allan H. Harvey, Yauheni Paulechka, Patrick F. Egan
Dichlorodifluoromethane (R-12) has been used as a radiating gas in pressure threshold Cherenkov detectors for high-energy particle physics. However, that ozone-depleting compound is becoming unavailable due to the Montreal Protocol. To find a replacement

Wideband infrared trap detector based upon doped silicon photocurrent devices

April 9, 2018
Author(s)
Solomon I. Woods, James E. Proctor, Timothy M. Jung, Adriaan C. Carter, Dana R. Defibaugh, Jorge Neira
We have designed, fabricated and measured infrared trapping detectors made from arsenic-doped silicon (Si:As) blocked impurity band (BIB) photodetectors. These trap detectors are composed of two detectors in a wedge geometry, with an entrance aperture

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

March 26, 2018
Author(s)
Jeffrey T. Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Briles, David R. Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott A. Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor

Enhancing optical microscopy illumination to enable quantitative imaging

March 18, 2018
Author(s)
Emil Agocs, Ravikiran Attota
There has been an increasing push to derive quantitative measurements using optical microscopes. While several aspects of microscopy have been identified to enhance quantitative imaging, non- uniform angular illumination asymmetry (ANILAS) across the field

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

March 6, 2018
Author(s)
Nima Nader, Daniel Maser, Flavio Caldas da Cruz, Abijith S. Kowligy, Henry R. Timmers, Jeffrey T. Chiles, Connor D. Fredrick, Daron A. Westly, Richard P. Mirin, Jeffrey M. Shainline, Scott A. Diddams
Infrared spectroscopy is a powerful tool for basic and applied science. The rich “spectral fingerprints” of compounds in the 3 um - 20 um region provide a means to uniquely identify the molecular structure for applications that include fundamental
Displaying 601 - 625 of 1598
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