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Deuterated silicon nitride photonic devices for broadband optical frequency comb generation



Jeffrey T. Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Briles, David R. Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott A. Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin


We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6×10^6 at 1552 nm and >1.2×10^6 throughout λ = 1510–1600 nm, without annealing or stress management (film thickness of 920 nm). We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free-spectral-range, 900 nm bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.
Optics Letters


Chiles, J. , Nader, N. , Hickstein, D. , , S. , Briles, T. , Carlson, D. , Jung, H. , Shainline, J. , Diddams, S. , Papp, S. , Nam, S. and Mirin, R. (2018), Deuterated silicon nitride photonic devices for broadband optical frequency comb generation, Optics Letters, [online], (Accessed June 20, 2024)


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Created March 26, 2018, Updated July 9, 2019