NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 49076 - 49100 of 73697

Energy Dispersive X-Ray Spectrometry With the Transition Edge Sensor Microcalorimeter: A Revolutionary Advance in Materials Microanalysis

December 1, 1999
Author(s)
Dale E. Newbury, David A. Wollman, Kent D. Irwin, Gene C. Hilton, John M. Martinis
The NIST microcalorimeter energy dispersive x-ray spectrometer provides important advances in x-ray spectrometry. The high spectral resolution, approaching 2 eV for photon energies below 2 keV, the wide photon energy coverage, 250 eV to 10 keV, and the

Equivalent Circuit Models for Coaxial OSLT Standards

December 1, 1999
Author(s)
Donald C. DeGroot, K. L. Reed, Jeffrey Jargon
We use a general description of transmission lines to develop analytic descriptions for offset OSLT (Open-Short-Load-Thru) standards used to calibrate vector network analyzers.

Exposure Parameters During Studies with ELF Magnetic and Electric Fields

December 1, 1999
Author(s)
Martin Misakian
Following a brief introduction to terminology that describes power frequency and other extremely low frequency [ELF] magnetic and electric fields, a short survey is given of methods for simulating and characterizing in a laboratory setting fields

Giving a Boost to Atoms

December 1, 1999
Author(s)
Kristian Helmerson
Matter waves can now be amplified in the same way that a laser amplifies light. Such matter-wave amplifiers will be essential for future developments in atom optics.

High Temperature Deformation of Silicon Nitride

December 1, 1999
Author(s)
Sheldon M. Wiederhorn
Three mechanisms for the creep of silicon nitride are discussed with regard to the microstructural variables that control creep. During the initial stages of creep, the amorphous silicate layer that coats all grains of silicon nitride is displaced from

High-Speed Resonant Cavity Enhanced Photodiodes

December 1, 1999
Author(s)
M. S. {Umlat}nl{umlat}, E. Vzbay, E. Towe, Richard Mirin, David H. Christensen
We have demonstrated RCE Schottky phodiodes with GaAs absorption regions in AlGaAs/AlAs microcavities (3).
Displaying 49076 - 49100 of 73697
Was this page helpful?