November 1, 2006
Author(s)
Hao Xiong, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, which