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Displaying 376 - 400 of 1757

Effects of Consumer Use Practices on Nanosilver Release from Commercially Available Food Contact Materials

October 23, 2018
Author(s)
Susana Addo Ntim, Samuel R. Norris, David Goodwin, Jens Breffke, Keana Scott, Li Piin Sung, Treye Thomas, Gregory O. Noonan
Migration evaluation involving nano-enabled food contact materials (FCMs) mostly focus on potential nanoparticle release from new unused products. This may not represent consumer use practices encountered by the FCMs in their lifecycle. In order to

Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications

October 15, 2018
Author(s)
Asha Rani, Shiqi Guo, Sergiy Krylyuk, Albert Davydov
Single-crystalline MoSe2 and MoTe2 platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in

Nondestructive shape process monitoring of three-dimensional high aspect ratio targets using through-focus scanning optical microscopy Optical Microscopy

September 27, 2018
Author(s)
Ravikiran Attota, Hyeonggon Kang, Keana C. Scott, Richard A. Allen, Andras Vladar, Bunday Benjamin
Low-cost, high-throughput and nondestructive metrology of truly three-dimensional (3-D) targets for process control/monitoring is a critically needed enabling technology for high-volume manufacturing (HVM) of nano/micro technologies in multi-disciplinary

Approaches for the Quantitative Analysis of Oxidation State in Cerium Oxide Nanomaterials

September 21, 2018
Author(s)
Christopher M. Sims, Russell A. Maier, Aaron C. Johnston-Peck, Justin M. Gorham, Vincent A. Hackley, Bryant C. Nelson
Cerium oxide nanomaterials (nanoceria, CNMs) are receiving increased attention from the research community due to their unique chemical properties, most prominent of which is their ability to alternate between the Ce3+ and Ce4+ oxidation states. While many

Core-Shell p-i-n GaN Nanowire LEDs by N-polar Selective Area Growth

September 11, 2018
Author(s)
Matthew D. Brubaker, Kristen L. Genter, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N- polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW

Epitaxial Graphene for High-Current QHE Resistance Standards

July 9, 2018
Author(s)
Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist
We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology improvements. Magneto-transport measurements on graphene quantum Hall effect devices demonstrate the

Epitaxial Graphene p-n Junctions

July 9, 2018
Author(s)
Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_
Displaying 376 - 400 of 1757
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