January 1, 2006
      
                  
        
  Author(s)
  Kristine A. Bertness,   Alexana  Roshko,   Norman A. Sanford,   Joy  Barker,   Albert  Davydov
 
       
            
    
    
        We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the