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Displaying 276 - 300 of 1911

Influence of Metal?MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts

December 16, 2014
Author(s)
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
… the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the … slope is steeper relative to comparable transistors with 30 nm Au/ 30nm Ti source/drain contacts. The topography of …

Multicomponent gamma-prime-strengthened Co-based superalloys with increased solvus temperature and decreased density

February 3, 2018
Author(s)
Eric Lass, Daniel J. Sauza, David C. Dunand, David N. Seidman
… -1.63±0.85 mJ·m-2. Decreasing the mole fraction of Ni from 30 % to 10 % results in decreased partitioning of Al and Ti … at 900 °C in Co-xNi-7Al-4Ti-3Mo-2W-1Nb-1Ta (x=10 and 30) interfacial energies of 19.3 mJ·m-2 and 10.0 mJ·m-2 are calculated for mole fractions of Ni of 10 % and 30 %, respectively. This decrease in interfacial energy with …

Dielectric Measurement Methods at Millimeter Wave Frequencies

October 16, 2008
Author(s)
Michael D. Janezic
… of low-loss dielectric materials at frequencies between 30 and 100 GHz. Many conventional methods that operates at … four resonant measurement methods that operate above 30 GHz-- the split-cylinder resonator, split-post resonator, …
Displaying 276 - 300 of 1911
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