October 31, 2014
Author(s)
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a permanent degradation, there is a large recoverable degradation component [7] that