NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electronics

Semiconductors

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 301 - 325 of 748

193 nm scatterfield microscope illumination optics

December 17, 2014
Author(s)
Martin Y. Sohn, Richard M. Silver
A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics are

Influence of Metal?MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts

December 16, 2014
Author(s)
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

December 13, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were

Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure

December 8, 2014
Author(s)
Hui H. Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Metal-Oxide-Semiconductor capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

November 13, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Gennadi Bersuker, Chadwin D. Young
Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to translate

Influence of the central mode and soft phonon on the microwave dielectric loss near the strain-induced ferroelectric phase transitions in Sr n+1 uTi n uO 3n+1 u*

November 12, 2014
Author(s)
V. Goian, S. Kamba, D Nuzhnyy, Nathan Orloff, T. Birol, C.-H Lee, D. G. Schlom, James Booth
Recently, Lee et al. [1] used1% tensile strain to induce a ferroelectic instability in thin films of Srdn+1uTi nuO 3n+1u (n=1-6) phases. They showed that the Curie temperature T cu gradually increased with n, reaching 180 K for Sr7Ti6O19 (n=6). The

Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

November 7, 2014
Author(s)
Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal

Impact of BTI on Random Logic Circuit Critical Timing

October 31, 2014
Author(s)
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a “permanent” degradation, there is a large recoverable degradation component [7] that

Structural and Dynamical Studies of Acid Mediated Conversion in Amorphous-Calcium-Phosphate Based Dental Composites

October 31, 2014
Author(s)
Fan Zhang, Andrew Allen, Lyle E. Levine, Mark D. Vaudin, Drago Skrtic, Joseph M. Antonucci, Kathleen Hoffman, Anthony A. Giuseppetti, Jan Ilavsky
Amorphous calcium phosphate (ACP) based composites are promising restorative dental materials attributable to ACP's capacity to release calcium and phosphate ions through a complex reaction in which ACP is converted to its crystalline, apatitic form

Ultrafast THz photoconductivity of photovoltaic polymer-fullerene blends: a comparative study correlated with photovoltaic device performance

October 10, 2014
Author(s)
Edwin J. Heilweil, Jin Zuanming, Dominik Gehrig, Clare Dyer-Smith, Frederic Laquai, Mischa Bonn, Dmitry Turchinovich
Ultrafast photo-induced carrier dynamics in prototypical low band-gap polymer:fullerene photovoltaic blend films PTB7:PC70BM and P3HT:PC70BM is investigated using ultrafast terahertz (THz) spectroscopy. The sub-picosecond (ps) and few-ps decays of THz

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and

Selective Area Growth of Ga- and N-polar GaN Nanowire Arrays on Non-Polar Si (111) Substrates

September 7, 2014
Author(s)
Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford
This study presents a technique for obtaining Ga- and N-polar Gallium Nitride nanowire (GaN NW) arrays on non-polar Si (111) substrates by use of polarity-controlled AlN/GaN buffer layers. AlN films are demonstrated to adopt Al-/N-polarity for N-/Al-rich

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

August 5, 2014
Author(s)
Kevin J. Dwyer, Joshua M. Pomeroy, David S. Simons, June W. Lau, Kristen L. Steffens
Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials

Crosstalk Corrections for Coplanar-Waveguide Scattering-Parameter Calibrations

August 1, 2014
Author(s)
Dylan F. Williams, Franz-Josef Schmuckle, Ralf Doerner, Phung N. Gia, Uwe Arz, Wolfgang Heinrich
We study crosstalk and crosstalk corrections in coplanar waveguide vector-network-analyzer calibrations. We show that while crosstalk corrections can improve measurement accuracy, the effectiveness of the corrections depends on a number of factors

Development of an EUVL collector with infrared radiation suppression

August 1, 2014
Author(s)
Steven E. Grantham, Mike Kriese, Yuriy Platonov, Bodo Ehlers, Licai Jiang, Jim Rodriguez, Mueller Ulrich, Shayna khatri, Adam Magruder, Charles S. Tarrio
Laser-produced plasma (LPP) sources for extreme ultraviolet lithography (EUVL) systems utilize CO2 lasers operating with wavelength 10.6μm. Since multilayer-coated optics have high reflectivity for this infrared radiation (IR), a significant and

Improved measurement capabilities at the NIST EUV Reflectometry Facility

August 1, 2014
Author(s)
Charles S. Tarrio, Steven E. Grantham, Thomas A. Germer, Jack C. Rife, Thomas B. Lucatorto, Mike Kriese, Yuriy Platonov, Licai Jiang, Jim Rodriguez
The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown

The effect of protein corona composition on the interaction of carbon nanotubes with human blood platelets

July 31, 2014
Author(s)
Silvia H. De Paoli Lacerda, Lukas Diduch, Tseday Tegegn, Martina Orecna, Michael Strader, Elena Karnaukhova, John Bonevich, Abdu Alayash, Karel Holada, Jan Simak
Carbon nanotubes (CNT) are one of the most promising nanomaterials for use in medicine. Applications of CNT in drug/gene delivery, diagnostics and tissue engineering, among other applications, require contact of CNT with blood. Therefore, evaluation of

Electronic Structure and Band Alignment at Epitaxial Co3O4/SrTiO3 Heterojunction

July 21, 2014
Author(s)
Liang Qiao, Wei Li, Haiyan xiao, Harry M. Meyer, Xuelei Liang, Nhan Van Nguyen, Michael D. Biegalski
The electronic properties of solid-solid interfaces play critical roles in a variety of technological applications. Recent advance of film epitaxy and characterization techniques have demonstrated a wealthy of exotic phenomena at interfaces of oxide

Photon Emission from a Cavity-Coupled Double Quantum Dot

July 16, 2014
Author(s)
Y.-Y. Liu, Karl Petersson, J. Stehlik, Jacob Taylor, Jason Petta
We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic
Was this page helpful?