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Bioscience

Biomaterials

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Displaying 1726 - 1733 of 1733

Effect of Interface Properties on Microcracking of Iron Titanate

January 1, 1998
Author(s)
A Saigal, Stephen A. Langer, W Carter, M H. Zimmerman, K T. Faber, Lin-Sien H. Lum
It has been shown both experimentally and theoretically that mechanical properties are strongly dependent on the grain size in single-phase polycrystalline ceramics with large thermal expansion anisotropy [1,2]. This dependence is related to the residual

Evolution of the Microstructure of Plasma-Sprayed Deposits During Heating

January 1, 1998
Author(s)
Gabrielle G. Long, Andrew J. Allen, J Ilavsky
The evolution of the void microstructure of yttria-stabilized zirconia [YSZ] plasma-sprayed deposits [PSD] was studied as a function of heating in air from room temperature to 1400 C, and during a constant temperature hold at 1100 C for 19 hours. The

Small Angle Scattering Studies of Dendrimer Blends and Interpenetrating Polymer Networks

January 1, 1998
Author(s)
Barry J. Bauer, A Topp, T J. Prosa, Da-Wei Liu, C L. Jackson, Eric J. Amis
This report gives an overview about the first results of an investigation of mixtures that consist of dendrimers and conventional polymers. Poly[amido amine] PAMAM] or poly[propylene amine] [PPI] dendrimers were blended with linear polymers that contain

Workshop on Micromechanics Measurement Technologies for Fiber-Polymer Interfaces

May 1, 1997
Author(s)
Walter G. McDonough, Richard~undefined~undefined~undefined~undefined~undefined Parnas, Gale A. Holmes, Donald L. Hunston
The Polymers Division hosted the Workshop on Micromechanics Measurement Technologies for Fiber-Polymer Interfaces, jointly sponsored by NIST and the Textile Research Institute of Princeton, NJ, on May 28-30, 1997. Fifty researchers from industry, academia

Mechanical Properties of Aluminum Nitride Substrates

December 1, 1996
Author(s)
Jay S. Wallace, Lin-Sien H. Lum
Aluminum nitride (AlN),because of its high thermal conductivity, is seeing increased use for heat management applications of semiconductor devices. With the likelihood of large mechanical stresses, both during fabrication as well as in service, mechanical
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