Round Robin Determination of Power Spectral Densities of Different Si Wafer Surfaces

Published

March 1, 1998

Author(s)

Egon Marx, I J. Malik, Y Strausser, T Bristow, N Poduje, J C. Stover

Abstract

Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial wafers. The wafer surfaces were then measured with different methods: atomic force microscopy, angle-resolved light scatter, interferometric and stylus profilometries, and capacitance-based wafer thickness gages. The data were converted into one-dimensional PSDs and the curves were plotted as functions of spatial frequencies. The useful frequency range for each method is indicated and the differences in the calculated PSD values in the overlapping region of two or more methods are discussed. The method used to convert two-dimensional PSDs to one-dimensional ones is presented.

Proceedings Title

Proceedings of SPIE, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, John C. Stover, Editor

Volume

3275

Conference Dates

January 29, 1998

Conference Location

San Jose, CA, USA

Conference Title

Roughness Metrology

Pub Type

Conferences

Keywords

power spectral density, Si wafers, surface imaging, surface roughness

Citation

Marx, E. , Malik, I. , Strausser, Y. , Bristow, T. , Poduje, N. and Stover, J. (1998), Round Robin Determination of Power Spectral Densities of Different Si Wafer Surfaces, Proceedings of SPIE, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, John C. Stover, Editor, San Jose, CA, USA (Accessed December 5, 2024)