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Round Robin Determination of Power Spectral Densities of Different Si Wafer Surfaces

Published

Author(s)

Egon Marx, I J. Malik, Y Strausser, T Bristow, N Poduje, J C. Stover

Abstract

Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial wafers. The wafer surfaces were then measured with different methods: atomic force microscopy, angle-resolved light scatter, interferometric and stylus profilometries, and capacitance-based wafer thickness gages. The data were converted into one-dimensional PSDs and the curves were plotted as functions of spatial frequencies. The useful frequency range for each method is indicated and the differences in the calculated PSD values in the overlapping region of two or more methods are discussed. The method used to convert two-dimensional PSDs to one-dimensional ones is presented.
Proceedings Title
Proceedings of SPIE, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, John C. Stover, Editor
Volume
3275
Conference Dates
January 29, 1998
Conference Location
San Jose, CA, USA
Conference Title
Roughness Metrology

Keywords

power spectral density, Si wafers, surface imaging, surface roughness

Citation

Marx, E. , Malik, I. , Strausser, Y. , Bristow, T. , Poduje, N. and Stover, J. (1998), Round Robin Determination of Power Spectral Densities of Different Si Wafer Surfaces, Proceedings of SPIE, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, John C. Stover, Editor, San Jose, CA, USA (Accessed April 18, 2024)
Created February 28, 1998, Updated October 12, 2021