Campisi, G.
, Roitman, P.
and Shontz, G.
(1991),
The Role of Annealing Conditions on the Radiation Response of Backgate MOSFETs, Extended Abstract, Proc., Third Workshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor-Insulator Systems, Research Triangle Park, NC, USA
(Accessed December 12, 2024)
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The Role of Annealing Conditions on the Radiation Response of Backgate MOSFETs, Extended Abstract
Published
Author(s)
G. J. Campisi, , G. J. Shontz
Proceedings Title
Proc., Third Workshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor-Insulator Systems
Conference Dates
September 10-13, 1991
Conference Location
Research Triangle Park, NC, USA
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1991, Updated October 12, 2021