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The Role of Annealing Conditions on the Radiation Response of Backgate MOSFETs, Extended Abstract

Published

Author(s)

G. J. Campisi, Peter Roitman, G. J. Shontz
Proceedings Title
Proc., Third Workshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor-Insulator Systems
Conference Dates
September 10-13, 1991
Conference Location
Research Triangle Park, NC, USA

Citation

Campisi, G. , Roitman, P. and Shontz, G. (1991), The Role of Annealing Conditions on the Radiation Response of Backgate MOSFETs, Extended Abstract, Proc., Third Workshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor-Insulator Systems, Research Triangle Park, NC, USA (Accessed May 20, 2024)

Issues

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Created December 30, 1991, Updated October 12, 2021