Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to over 500 °C with a low 200 °C processing temperature that creates much greater mechanical reliability and rigidity while the thermal conductivity of the die-attach is increased by 67% and the thermal resistance reduced by an order of magnitude over the traditional Sn-Pb solders. It is also shown here that Au-In TLP bonds exude excellent electrical reliability with thermal cycling degradation if designed correctly as experimentally confirmed.
Proceedings Title: Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on
Conference Dates: May 23-26, 2011
Conference Location: San Diego, CA
Conference Title: 2011 23nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Pub Type: Conferences
SiC, Silicon Carbide, Semiconductor, Power Semiconductors, WBG, Wide Bandgap, Power Electronics, Packaging, TLP, Transient Liquid Phase, Resistivity, EDX, SEM, Indium, Au-In, Reliability, Thermal Cycling