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Reliability Characterization of Ultra-Thin Film Dielectrics

Published

Author(s)

John S. Suehle

Abstract

The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 mm in advanced CMOS technologies. Traditional reliability characterization techniques must be modified for very thin gate oxides and soft breakdown. As intrinsic reliability limits are approached by increasing chip temperature and electric fields, it becomes essential to fully understand the physical mechanism responsible for gate oxide wear-out and eventual breakdown. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.
Proceedings Title
Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology
Conference Location
Gaithersburg, MD

Keywords

dielectric breakdown, gate oxides, reliability, silicon dioxide

Citation

Suehle, J. (1998), Reliability Characterization of Ultra-Thin Film Dielectrics, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD (Accessed July 14, 2024)

Issues

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Created December 31, 1998, Updated February 17, 2017