Suehle, J.
(1998),
Reliability Characterization of Ultra-Thin Film Dielectrics, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Reliability Characterization of Ultra-Thin Film Dielectrics
Published
Author(s)
Abstract
The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 mm in advanced CMOS technologies. Traditional reliability characterization techniques must be modified for very thin gate oxides and soft breakdown. As intrinsic reliability limits are approached by increasing chip temperature and electric fields, it becomes essential to fully understand the physical mechanism responsible for gate oxide wear-out and eventual breakdown. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.Proceedings Title
Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology
Conference Location
Gaithersburg, MD
Pub Type
Conferences
Keywords
dielectric breakdown, gate oxides, reliability, silicon dioxide
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1998, Updated February 17, 2017