Fletcher, N.
, Rietveld, G.
, Olthoff, J.
and Budovsky, I.
(2014),
Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Systeme International), Conference on Precision Electromagnetic Measurements, Rio de Janeiro, BR, [online], https://doi.org/10.1109/CPEM.2014.6898444
(Accessed April 25, 2024)
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Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Systeme International)
Published
Author(s)
Nick Fletcher, Gert Rietveld, , Ilya F. Budovsky
Abstract
This paper considers the impact of the planned redefinition of the SI on electrical traceability, with a focus on resistance and voltage calibration. The new SI will replace the 1990 values for the critical constants RK and KJ. With the present state of experimental data, we can say with good confidence that the required relative changes will be of order the 2×10−8 for RK and 10×10−8 for KJ. These changes will only be visible for a small number of top-level standards in NMIs and industry. Thus, no disruption in traceability is anticipated due to this change and this paper is part of a communication campaign by the CCEM to ensure a smooth transition.Conference Dates
August 24-29, 2014
Conference Location
Rio de Janeiro, BR
Conference Title
Conference on Precision Electromagnetic Measurements
Pub Type
Conferences
Download Paper
Keywords
SI, traceability, electrical units, voltage, resistance, fundamental constants
Citation
Created October 1, 2014, Updated October 12, 2021