Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Systeme International)

Published

Author(s)

Nick Fletcher, Gert Rietveld, James K. Olthoff, Ilya F. Budovsky

Abstract

This paper considers the impact of the planned redefinition of the SI on electrical traceability, with a focus on resistance and voltage calibration. The new SI will replace the 1990 values for the critical constants RK and KJ. With the present state of experimental data, we can say with good confidence that the required relative changes will be of order the 2×10−8 for RK and 10×10−8 for KJ. These changes will only be visible for a small number of top-level standards in NMIs and industry. Thus, no disruption in traceability is anticipated due to this change and this paper is part of a communication campaign by the CCEM to ensure a smooth transition.
Conference Dates
August 24-29, 2014
Conference Location
Rio de Janeiro, BR
Conference Title
Conference on Precision Electromagnetic Measurements

Keywords

SI, traceability, electrical units, voltage, resistance, fundamental constants

Citation

Fletcher, N. , Rietveld, G. , Olthoff, J. and Budovsky, I. (2014), Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Systeme International), Conference on Precision Electromagnetic Measurements, Rio de Janeiro, BR, [online], https://doi.org/10.1109/CPEM.2014.6898444 (Accessed October 16, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 1, 2014, Updated October 12, 2021